Ohio State Innovation Foundation

Zhanbo Xia

Siddharth Rajan

Caiyu Wang

Wyatt Moore

A device is provided that comprises a first layer deposited onto a second layer. The second layer comprises a lightly doped n-type or p-type semiconductor drift layer, and the first layer comprises a high-k material with a dielectric constant that is at least two times higher than the value of the second layer. A metal Schottky contact is formed on the first layer and a metal ohmic contact is formed on the second layer. Under reverse bias, the dielectric constant discontinuity leads to a very low electric field in the second layer, while the electron barrier created by the first layer stays almost flat. Under forward bias, electrons flow through the first layer, into the metal ohmic contact. For small values of conduction band offset or valence band offset between the first layer and the second layer, the device is expected to support efficient electron or hole transport.

Dielectric heterojunction device

Dielectric super-junction transistors use combinations high dielectric relative permittivity materials and high-mobility materials. An associated electronic device includes a junction portion of a barrier layer adjacent a gate contact and a drain contact. A layered semiconductor device is configured with a junction dielectric permittivity that is greater than a channel dielectric permittivity in the channel layer. The junction portion has a dielectric structure that polarizes carriers within the junction portion such that excess charge on the gate is compensated by an opposite charge in the junction portion of the barrier layer proximate the gate. A sheet charge in the barrier layer is increased to form a depletion region with the channel layer that avoids a conductive parallel channel in the barrier layer to the drain contact.

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Columbus, OH, United States of America

Zhanbo Xia