Samsung Electronics Co., Ltd.

Zhan Zhan

Hwa Sung Rhee

Hwa-Sung Rhee

Ju Hyun Kim

Sung-Gun Kang

Ju-Hyun Kim

Ji-Young Choi

Min-Seob Kim

Sung Gun Kang

Myung Jo Chun

A method of detecting failure of a semiconductor device includes forming an active fin on an active region of a substrate, the active fin extending in a first direction, forming a gate structure on the active fin, the gate structure extending in a second direction intersecting the first direction, forming source/drain layers on respective portions of the active fins at opposite sides of the gate structure, forming a wiring to be electrically connected to the source/drain layers, and applying a voltage to measure a leakage current between the source/drain layers. Only one or two active fins may be formed on the active region. Only one or two gate structures may be formed on the active fin.

Method of detecting failure of a semiconductor device

A test element group includes a test element including a plurality of test transistors connected in series between a first node and a second node, the second node being connected to a ground node; a first transistor connected between the first node and a power supply node; and a second transistor configured to generate an output current, proportional to a voltage at the first node, and connected to the first node and the power supply node.

Test element group and semiconductor wafer including the same

A semiconductor device includes first and second pads separated from each other, first and second test elements connected to the first and second pads and connected to each other in parallel between the first and second pads, a first diode connected to the first test element in series, and a second diode connected to the second test element in series.

Semiconductor device

Growing community of inventors

Suwon-si, South Korea

Zhan Zhan