Changxin Memory Technologies, Inc.

Anhui University

Zhan Ying

Jun He

Jie Liu

Xin Li

Kui Zhang

Junning Chen

Zhiting Lin

Chunyu Peng

Wenjuan Lu

Xiulong Wu

Kanyu Cao

Shu-Liang Ning

Yuhan Zhu

Chuxian Liao

Shuliang Ning

Qiang Zhang

Yuanyuan Gong

Yangkuo Zhao

KangLing Ji

Yiming Zhu

Heng-Chia Chang

Li Ding

Chuanqi Shi

Changhao Quan

Lixia Zhang

Zijian Wang

Junlin Ge

Weiping Bai

Ping-Heng Wu

Xingsong Su

Rumin Ji

Bin Yang

Pan Yuan

Li Zhao

Guanglei Wen

Li Zhu

Jianqing Li

A protection ring, a method for forming a protection ring, and a semiconductor structure are provided. The protection ring at least includes a buried protection structure. The buried protection structure is arranged in a semiconductor substrate. The buried protection structure is configured to protect a first functional structure formed inside the semiconductor substrate.

Protection ring, method for forming protection ring, and semiconductor structure

A semiconductor structure includes a semiconductor base, a bit line and a word line. The semiconductor base includes a substrate and an isolation structure arranged above the substrate and configured to isolate a plurality of active regions from each other. The bit line is arranged in the substrate and connected to the plurality of active regions. The word line intersects with the plurality of active regions and surrounds the plurality of active regions.

Semiconductor structure and method for manufacturing semiconductor structure

A chip package structure and a storage system are provided. The chip package structure includes a chipset, a first Re-Distribution Layer (RDL), and a bonding pad region. The chipset includes a plurality of chips distributed horizontally. The first RDL is disposed on a first surface of the chipset. The bonding pad region includes a plurality of bonding pads, the plurality of bonding pads are located on a side surface of the first RDL away from the chipset, and the plurality of bonding pads are connected to the plurality of chips through the first RDL.

Chip package structure and storage system

The present application provides a method for manufacturing a memory and a memory, which relate to the technical field of memory devices and are used to solve the technical problems of relatively low storage speed and storage efficiency. The manufacturing method includes: providing a substrate, a plurality of capacitor contact pads being disposed at intervals in the substrate; forming a first recess on a first surface of each of the capacitor contact pads; forming conductive pillars in the first recesses, upper end surfaces of the conductive pillars being flush with the first surfaces of the capacitor contact pads; and forming a plurality of capacitors on the substrate, the plurality of the capacitors and the plurality of the capacitor contact pads corresponding one to one and being electrically connected; wherein a first plate of each of the capacitors covers the corresponding conductive pillar.

Method for manufacturing memory and memory

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a first transistor, located on the substrate; a second transistor, located above the first transistor; and a gate structure, the gate structure including a first gate layer and a second gate layer, which connected to each other, the first gate layer surrounding the first transistor and the second gate layer surrounding the second transistor; an extension direction of the first transistor and an extension direction of the second transistor are both perpendicular to the substrate.

Semiconductor structure and manufacturing method thereof

Embodiments of the present disclosure provide a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a base; forming a bottom electrode layer on the base, wherein a crystal structure of the bottom electrode layer includes a tetragonal crystal system; forming a first dielectric layer on a surface of the bottom electrode layer by using the bottom electrode layer as a seed layer, wherein a crystal structure of the first dielectric layer includes a tetragonal crystal system; and forming a first current blocking layer on a surface of the first dielectric layer.

A forming method for a semiconductor structure and the semiconductor structure are provided. The forming method of the semiconductor structure includes: providing a substrate, wherein separate bit line structures are formed on the substrate; forming a first sacrificial layer on a sidewall of a bit line structure; forming first dielectric layer filling gaps between adjacent bit line structures; patterning a first dielectric layer to form vias, wherein the vias expose active regions of the substrate, and the vias and remaining parts of the first dielectric layers are alternately arranged in an extension direction of the bit line structures; forming a second sacrificial layer on sidewalls of a via, and filling the via to form a contact plugs; forming a contact structure on the contact plug; and removing the first sacrificial layer to form first air gap, and removing the second sacrificial layer to form a second air gap.

Forming method for semiconductor structure and semiconductor structure

A semiconductor structure and a semiconductor structure manufacturing method is provided. The semiconductor structure includes: a wordline; and a first bitline and a second bitline located on two sides of the wordline and a first storage structure and a second storage structure located on the two sides of the wordline, the first bitline and the second bitline being connected to the first storage structure and the second storage structure respectively through a transistor. An extension direction of the first bitline and an extension direction of the wordline are at an acute or obtuse angle. In this way, the first storage structure and the second storage structure are provided on both sides of the wordline, which can increase storage capacity.

Semiconductor structure and semiconductor structure manufacturing method

An injection mould and an injection moulding method are provided. The injection mould includes: a base plate, configured to place a package chip to be injection-moulded, the package chip including a substrate and at least one chip fixed on a surface of the substrate by a flip chip process, the substrate having a through hole, a glue injection channel being formed in the base plate and configured to inject a moulding compound, and the glue injection channel being connected with the through hole on the substrate. The above-mentioned injection mould can improve the reliability of the package chip after injection moulding.

Injection mould and injection moulding method

A method for forming a semiconductor structure and the semiconductor structure are provided. The method for forming the semiconductor structure includes: providing a substrate, wherein a separate bit line structure is formed on the substrate; forming a first sacrificial layer on the side wall of the bit line structure; forming a first dielectric layer filling gap between the bit line structures; patterning the first dielectric layer and the first sacrificial layer to form a through hole, wherein the through hole and the remaining first dielectric layer and first sacrificial layer are alternately arranged; forming a second sacrificial layer on the side wall of the through hole, and filling the through hole to form a contact plug; forming a contact structure on the contact plug; and removing the first sacrificial layer to form a first air gap, and removing the second sacrificial layer to form a second air gap.

Method for forming semiconductor structure and semiconductor structure

A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a semiconductor base, a bit line and a word line. The semiconductor base includes a substrate and an isolation structure. The isolation structure is arranged above the substrate and configured to isolate a plurality of active regions from each other. The bit line is arranged in the substrate and connected to the plurality of active regions. The word line is arranged in the isolation structure, intersects with the plurality of active regions and surrounds the plurality of active regions. The substrate is a Silicon-On-Insulator (SOI) substrate.

Provided is a manufacturing method of a semiconductor structure, including: providing a substrate; forming a first mask layer having a first mask pattern on the substrate, and etching the substrate by using the first mask layer as a mask to form active regions; forming several discrete bitlines on the active regions; forming a sacrificial layer between adjacent bitlines; forming a second mask layer having a second mask pattern on the sacrificial layer, the first mask pattern and the second mask pattern being complementary to each other; and etching the sacrificial layer by using the second mask layer and the bitlines as masks to form a plurality of contact structures. The embodiment of the present disclosure is beneficial to reducing the manufacturing cost of the semiconductor structure.

Manufacturing method of semiconductor structure including complementary first and second mask patterns

A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a semiconductor body, bit lines and word lines. The semiconductor body includes a substrate and an isolation structure positioned above the substrate and configured to isolate a plurality of active regions, part of each of the active regions being formed from the substrate. The bit lines are positioned in the substrate and are connected to the active regions. The word lines intersect with the active regions and surround the active regions. The substrate is Silicon On Insulator (SOI) substrate.

Embodiments of the present disclosure propose a semiconductor packaging method and a semiconductor structure. The semiconductor packaging method includes: providing a substrate; forming a metal pad on the substrate, where there is a gap between a sidewall of the metal pad and the substrate; and connecting multiple metal pads on substrates to each other.

Semiconductor packaging method and semiconductor structure

Embodiments of the present application provide a semiconductor structure and a semiconductor structure manufacturing method. The semiconductor structure includes: a wordline; and a first bitline and a second bitline located on two sides of the wordline and a first memory structure and a second memory structure located on the two sides of the wordline. The first bitline and the second bitline are connected to the first memory structure and the second memory structure respectively through a transistor. An extension direction of the first bitline is perpendicular to an extension direction of the wordline.

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Hefei, China

Zhan Ying