Chinese Academy of Sciences

Zeyu Zhao

Xiangang Luo

Mingbo Pu

Ping Gao

Xiaoliang Ma

Xiong Li

Yanqin Wang

Kaipeng Liu

Yunfei Luo

Changtao Wang

Yinghui Guo

Chengwei Zhao

Min Wang

Weijie Kong

Shuai Mou

Yu Gu

Di Sang

Mingfeng Xu

Yiyun Zhang

Liqin Liu

Ling Liu

Jiayu He

Jiong Wang

Leilei Yang

Cheng Huang

Chenggang Hu

Na Yao

Cheng Haung

The present disclosure provides a high-order rotational symmetry unit-based nonlinear geometric phase metasurface, which sequentially comprises from the bottom to the top: a substrate (); a nonlinear material layer (); and a metasurface structure layer (), comprising multiple super-configuration units () having local high-order rotational symmetry, wherein the super-configuration units () are periodically arranged to form a lattice structure which has global high-order rotational symmetry. Under the pumping of fundamental waves in a circular polarization state, the nonlinear geometric phase metasurface can simultaneously generate nonlinear harmonic waves having the same and opposite circular polarization states as the fundamental waves, and a nonlinear geometric phase of the generated nonlinear harmonic waves is regulated and controlled by a local rotational symmetry order and lattice structure of the super-configuration units.

High-order rotational symmetry unit-based nonlinear geometric phase metasurface

The present disclosure relates to a field of dry etching technology. The present disclosure provides an ultra-large area scanning reactive ion etching machine and an etching method thereof. The ultra-large area scanning reactive ion etching machine includes: an injection chamber, an etching reaction chamber, a transition chamber, and an etching ion generation chamber. By moving a sample holder among the injection chamber, the etching reaction chamber and the transition chamber in a scanning direction, a scanning etching is performed on a sample placed on the sample holder, which may realize a large-area, uniform and efficient etching.

Ultra-large area scanning reactive ion etching machine and etching method thereof

A photolithography method includes: sequentially preparing a functional film layer, a reflective auxiliary imaging film layer and a first photoresist layer which are stacked, on a photolithography substrate; performing photolithography on the first photoresist layer to obtain a first photolithography structure; etching the reflective auxiliary imaging film layer with the first photolithography structure as a masking layer; on the pattern of the reflective auxiliary imaging film layer, sequentially preparing a second photoresist layer and a transmissive auxiliary imaging film layer which stacked; performing surface plasmon photolithography with the pattern of the reflective auxiliary imaging film layer as a mask, removing the transmissive auxiliary imaging film layer, and then developing the second photoresist layer, to obtain a second photolithography structure; and etching the functional film layer, with the second photolithography structure as a masking layer, to obtain a third photolithography structure.

Photolithography method

A mask topology optimization method for surface plasmon near-field photolithography, including: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Mask topology optimization method and system for surface plasmon near-field photolithography

A method for preparing a metal-dielectric strip array based super-resolution lens includes: performing lithography on a first material layer on a first substrate to obtain a grating structure; alternately depositing second and third material layers until the grating structure is filled up, to obtain a first transition structure, one of the second and third material layers being of metal, and the other one being of dielectric; performing planarization on the first transition structure at least reach the top of the grating structure, to obtain a second transition structure; adhering an upper surface of the second transition structure to a second substrate; removing the first substrate, and performing overturning to make the second transition structure be on the second substrate to obtain a third transition structure; and performing planarization again to at least reach the top of finally deposited second or third material layer, to obtain the super-resolution lens.

Method for preparing super-resolution lens based on metal-dielectric strip array, and using method of super-resolution lens

Provided is an near-field lithography immersion system, including: an immersion unit including: a liquid flow channel and a gas flow channel configured to apply gas to confine an immersion liquid provided by the liquid flow channel into an exposure field; at least two interface modules, the interface module includes a gas connector, a liquid connector and a brake connector, the gas connector and the liquid connector are correspondingly connected to the gas flow channel and the liquid flow channel, respectively, the brake connector is configured to control an assembly and a disassembly of the immersion unit, and the interface module is detachably connected to the immersion unit; and a mask loading module including a mask base plate and a mask, the immersion liquid is guided to an edge of the mask from below the mask base plate to form an immersion field between the mask and a substrate.

Near-field lithography immersion system, immersion unit and interface module thereof

A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.

Method for etching curved substrate

The present disclosure provides a secondary imaging optical lithography method and apparatus. The method includes: contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer; irradiating the photosensitive layer through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer; coating a device substrate for fabricating devices with a photoresist; contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely; irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer to the photoresist of the device substrate; and developing the device substrate comprising an exposed photoresist, so as to obtain a device pattern conforming to the pattern of the lithography mask plate.

Secondary imaging optical lithography method and apparatus

The present disclosure proposes an apparatus for coating photoresist and a method for coating photoresist. The apparatus for coating photoresist comprises a gas supply unit () configured to supply gas to a photoresist application unit (); wherein the photoresist application unit () comprises: a device cavity () enclosed by sidewalls, a bottom plate and a cover plate (), a rotation platform () configured to carry a substrate () and bring the substrate to rotate; a guide unit conformal with the substrate, and configured to uniformly blow the gas supplied by the gas supply unit over a surface of the substrate on which the photoresist is coated; and a gas extraction unit () configured to extract gas from the device cavity (). The present disclosure realizes uniformly and rapidly coating the photoresist on a large substrate.

Methods and apparatuses for coating photoresist

Provided are apparatuses and methods for super resolution imaging photolithography. An exemplary apparatus may include an illumination light generation device configured to generate illumination light for imaging a pattern included in a mask through the mask. The illumination light may include a high-frequency spatial spectrum such that a high-frequency evanescent wave component of spatial spectrum information for the light is converted to a low-frequency evanescent wave component after being transmitted through the mask pattern. For example, the illumination light generation device may be configured to form the illumination in accordance with a high numerical aperture (NA) illumination mode and/or a surface plasmon (SP) wave illumination mode.

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Sichuan, China

Zeyu Zhao