Coolcad Electronics, LLC

University System of Maryland

National Security Agency

Flexel, LLC

Zeynep Dilli

Neil Goldsman

Akin Akturk

Mitchell Adrian Gross

Brendan Michael Cusack

Martin C Peckerar

Yves T Ngu

Daniel A Lowy

George M Metze

Christopher James Darmody

Usama Khalid

Mahsa Dornajafi

Aysanew Abate

Robert Benjamin Proctor

A high-temperature silicon carbide device, along with an integrated circuit including the device and method of fabricating the device are described. For example, the method includes forming one of a source region and a drain region of a silicon carbide metal-oxide-semiconductor device. The method may include forming a gate structure adjacent to either one of the source region and the drain region. The gate structure may include an insulating layer. The method may further include forming the insulating layer with a first growth step performed in a pure oxygen environment and with a second growth step performed in a nitrous oxide environment.

Fabrication of a high temperature silicon carbide transistor device

A SiC integrated circuit structure which allows multiple power MOSFETs or LDMOSs to exist in the same piece of semiconductor substrate and still function as individual devices which form the components of a given circuit architecture, for example, and not by limitation, in a half-bridge module. In one example, a deep isolation trench is etched into the silicon carbide substrate surrounding each individual LDMOS device. The trench is filled with an insulating material. The depth of the trench may be deeper than the thickness of an epitaxial layer to ensure electrical isolation between the individual epitaxial layer regions housing the individual LDMOSs. The width of the trench may be selected to withstand the potential difference between the bias levels of the body regions of neighboring power LDMOS devices.

Structure for silicon carbide integrated power MOSFETs on a single substrate

An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The P-N junction photodiodes include a blanket oxide over the silicon carbide substrate and the gate, an implant extending into the silicon carbide substrate, and an opening extending through the blanket oxide layer down to the silicon carbide substrate on one side of the gate of the P-N junction photodiode.

Photodetector in a silicon carbide integrated circuit

An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.

Silicon carbide integrated circuit including P-N junction photodiode

Silicon carbide integrated circuit active photodetector

Systems for batteries or galvanic cells are disclosed. The system comprises a mixing chamber. The system further comprises a first reservoir, in fluid communication with a mixing chamber, the first reservoir configured to store a concentrated electrolyte. Additionally the system comprises a pump configured to pump a fluid into the mixing chamber. The system further comprises an electrochemical energy cell in fluid communication with the mixing chamber wherein the mixing chamber is configured to receive the fluid and concentrated electrolyte and mix the fluid and the concentrated electrolyte to produce a diluted electrolyte. Finally the system comprises the electrochemical energy cell configured to receive the diluted electrolyte, use the received diluted electrolyte for an electrochemical reaction and remove the used electrolyte solution from the cell.

Zinc-water battery and system

A thin, rechargeable, flexible electrochemical energy cell includes a battery cell, or a capacitor cell, or a battery/capacitor hybrid cell that can be stackable in any number and order. The cell can be based on a powdery mixture of hydrated ruthenium oxide particles or nanoparticles with activated carbon particles or nanoparticles suspended in an electrolyte. The electrolyte may contain ethylene glycol, boric acid, citric acid, ammonium hydroxide, organic acids, phosphoric acid, and/or sulphuric acid. An anode electrode may be formed with a thin layer of oxidizable metal (Zn, Al, or Pb). The cathode may be formed with a graphite backing foil. The energy cell may have a voltage at or below 1.25V for recharging. The thickness 15 of the cell structure can be in the range of 0.5 mm-1 mm, or lower.

Thin flexible rechargeable electrochemical energy cell and method of fabrication

Growing community of inventors

Rockville, MD, United States of America

Zeynep Dilli