Kepler Computing Inc.

Crossbar, Inc.

Zeying Ren

Sasikanth Manipatruni

Amrita Mathuriya

Rajeev Kumar Dokania

Niloy Mukherjee

Tanay Gosavi

Noriyuki Sato

Ramamoorthy Ramesh

Somilkumar J Rathi

Mauricio Manfrini

Pratyush Pandey

Jason Y Wu

Gabriel Antonio Paulius Velarde

Fnu Atiquzzaman

Sung Hyun Jo

Xianliang Liu

Joanna Bettinger

Xu Zhao

Fengchiao Joyce Lin

A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices

Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies

Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors

Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. The metal compounds can be selected to release metal atoms in response to an external stimulus (e.g., an electric field, a voltage, a current, heat, etc.) into an electrically-resistive switching medium, which is at least in part permeable to drift or diffusion of the metal atoms. The metal atoms form a thin filament through the switching medium, switching the memory cell to a conductive state. The moderate resistivity of the particle donor layer in conjunction with the thin filament can result in an intrinsic resistance to current through the memory cell at voltages above a restriction voltage, protecting the memory cell from excessive current.

Resistive memory cell with intrinsic current control

Providing an electrode for a two-terminal memory device is described herein. By way of example, the electrode can comprise a contact surface that comprises at least one surface discontinuity. For instance, the electrode can have a gap, break, or other discontinuous portion of a surface that makes electrical contact with another component of the two-terminal memory device. In one example, the contact surface can comprise an annulus or an approximation of an annulus, having a discontinuity within a center of the annulus, for instance. In some embodiments, a disclosed electrode can be formed from a conductive layer deposited over a non-continuous surface formed by a via or trench in an insulator, or over a pillar device formed from or on the insulator.

Two-terminal memory electrode comprising a non-continuous contact surface

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Albany, CA, United States of America

Zeying Ren