Kabushiki Kaisha Toshiba

Zensaku Watanabe

Hitoshi Chiyoma

Masahiro Nakagawa

A solid-state image sensing device includes an image sensing element and a light transmissive plate provided over the element. The plate contains borosilicate glass and the dose of radioactive .beta. rays emitted therefrom is small. The plate further contains potassium-based oxide the content of which is 0.1 or less in Wt %. The plate is provided with, at least, one non-reflective film attached to a surface thereof, the surface facing a light-receiving surface of the element. By means of the film, the .beta. rays emitted from the plate further becomes small.

Solid-state image sensing device

Image sensor wherein there are provided a charge storage type photoelectric conversion section and a drive circuit including an integrated circuit on a substrate, and with these being connected by conductive strips, characterized in that capacitance adjustment conductive strips extend from the drive circuit section, and are arranged so as to pass underneath or close to the photoelectric conversion section and reduce variations in stray capacitances in the conductive strips.

Growing community of inventors

Yokohama, Japan

Zensaku Watanabe