Sharp Kabushiki Kaisha Corporation

Sumitomo Electric Industries, Limited

Zenpei Tani

Mototaka Taneya

Shigetoshi Ito

Kensaku Motoki

Yoshihiro Ueta

Takayuki Yuasa

Masaru Kubo

Seiichiro Kihara

Nobuyuki Miyauchi

Kiyoshi Kumata

Kazuhito Nagura

Takahiro Takimoto

Mitsuru Hosoki

Toshihiko Fukushima

Hiroshi Chikugawa

Masaru Ogawa

Katsushige Masui

Takehiro Shiomoto

Mitsuo Kobachi

Makoto Tsuji

Hajime Kashida

Tutomu Nakamura

Nobumasa Ono

Kiyoshi Ebina

Toshimitsu Kasamatsu

Junichiro Shigemasa

Atsushi Murayama

Hisao Nagao

Isamu Okubo

Masahiro Morita

Yukihisa Oda

Hirohumi Sindo

A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 &#x3bc;m or more.

Nitride-composite semiconductor laser element, its manufacturing method, and semiconductor optical device

Nitride semiconductor laser device including growth-inhibiting film at dislocation concentrated region

Method of manufacturing nitride-composite semiconductor laser element, with disclocation control

A photodetector with a built-in circuit includes a semiconductor substrate, an integrated circuit provided on the semiconductor substrate, and a photodiode provided on the semiconductor substrate. The integrated circuit includes a SiGe layer provided on at least a portion of the integrated circuit.

Photodetector with built-in circuit

A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode includes a photosensitive layer formed of an SiGe layer.

Circuit-incorporating photosensitive device

A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the laser chip. The base may have a monitor photodiode mounted thereon in the vicinity of the laser chip. The resin layer enclosing the laser chip or both of the laser chip and the monitor diode chip is made of a single synthetic resin having a thickness not greater than 500 .mu.m and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the laser chip.

Semiconductor laser device and resin layer

An optoelectronic device for sensing an object without any contact, the optoelectronic device being adapted to be connected to a control device which is capable of sending an identification code to the optoelectronic device, the optoelectronic device includes an optoelectronic element (110, 111) for receiving an input signal and for converting the received signal into an electrical signal, an address memory (121) for storing a self identification code, a determining unit (126) connected to the address memory (121) for determining a coincidence between the self identification code stored in the address memory (121) and the identification code sent from the control device, and an activating unit (127) connected to the determining unit (126) for driving the optoelectronic element (110, 111) at a time when the self identification code coincides with the identification code.

Optoelectronic device, information apparatus and data transmission

A novel comparator circuit is disclosed, in which a pulse output is obtained from the output terminal of a differential amplifier through a transistor by applying a threshold voltage to either input terminal of a differential amplifier composed of a pair of transistors and then comparing an input voltage applied to the other input terminal therewith, wherein the aforementioned pair of transistors of the differential amplifier are each composed of two transistors connected in a complex manner, the input voltage is directly inputted, without the use of a buffer or the like, by raising the input impedance of the comparator circuit to thereby simplify the circuit as a whole and to widen its scope of application. Further, the output terminal of the differential amplifier connected to a transistor in an output circuit of the comparator circuit and a power source are connected through a resistor so as to ensure against occurrence of impulses in the output pulses through prevention of operation of the output circuit alone before changing of the threshold voltage for causing a hysteresis property to be imparted to the comparator circuit.

Comparator circuit

An oscillator utilizing a negative resistance light emitting semiconductor diode is connected in series with voltage booster means which in turn provides a high voltage to electrodes of a gas igniter. Discharge of the gas between the electrodes occurs with the aid of the high voltage derived from the voltage booster means to thereby effect an ignition of the gas. Light emission from the diode in the absence of gas ignition is indicative of a deficiency in the supply of gas, while the absence of light emission in the absence of gas ignition is indicative of a deficiency in the operation of the oscillator circuit.

Igniter utilizing a negative resistance light emitting diode

Growing community of inventors

Tondabayashi, Japan

Zenpei Tani