Chinese Academy of Sciences

Rutgers, the State University of New Jersey

Zengxia Mei

Yonghui Zhang

Xiaolong Du

Yicheng Lu

Wen-Chiang Hong

Huili Liang

Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 &#x3bc;A, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.

Oxide-based flexible high voltage thin film transistor

The present invention provides a preparation method for a fully-transparent thin film transistor, wherein a transparent conductive gate electrode layer of the fully-transparent thin film transistor is used as a photolithographic mask, a photoresist is exposed through a rear surface of a transparent substrate, the transparent substrate has a transmittance higher than 60% to an exposure light beam, and the transparent conductive gate electrode layer has a transmittance lower than 5% to the exposure light beam. In the preparation method for a fully-transparent thin film transistor provided by the present invention, by using a self-aligned technology, the process complexity and the feature size of the device can both be reduced.

Preparation method for fully transparent thin film transistor

Growing community of inventors

Beijing, China

Zengxia Mei