Boe Technology Group Co., Ltd.

Zengsheng He

Lei Chen

Chao Liu

Yanan Niu

Yujun Zhang

Hongwei Tian

Changhai Feng

Zhaohui Li

A membrane material lamination device and a membrane material laminating method using the same are provided. The membrane material lamination device includes: two support structures, each support structure includes a support surface, the two support structures is capable of being in either a first state where the support surfaces are located in an identical plane or a second state where the support surfaces are located in different planes; a pressure application mechanism configured to be located at a first position when the two support structures are in the first state to support the membrane material through the support surfaces of the two support structures, and moved to a second position when the two support structures are in the second state to support the membrane material through the pressure application mechanism and a first support structure; a first driving mechanism; and a second driving mechanism.

Membrane material lamination device and membrane material lamination method using the same

The present application discloses a display panel having a display unit and an encapsulating structure for encapsulating the display unit. The encapsulating structure includes a growth layer on the display unit; and a graphene layer on a side of the growth layer distal to the display unit.

Display panel, display apparatus having the same, and fabricating method thereof

A method of manufacturing a low temperature polycrystalline silicon thin film and a thin film transistor, a thin film transistor, a display panel and a display device are provided. The method includes: forming an amorphous silicon thin film () on a substrate (); forming a pattern of a silicon oxide thin film () covering the amorphous silicon thin film (), a thickness of the silicon oxide thin film () located at a preset region being larger than that of the silicon oxide thin film () located at other regions; and irradiating the silicon oxide thin film () by using excimer laser to allow the amorphous silicon thin film () forming an initial polycrystalline silicon thin film (), the initial polycrystalline silicon thin film () located at the preset region being a target low temperature polycrystalline silicon thin film (). The polycrystalline silicon thin film has more uniform crystal size.

Method of manufacturing low temperature polycrystalline silicon thin film and thin film transistor, thin film transistor, display panel and display device

This disclosure relates to an array substrate wiring and manufacturing and repairing method thereof. The array substrate wiring comprises a first wiring formed on the substrate for transmitting electric signals; an insulating layer formed on the first wiring; a second wiring formed on the insulating layer, being opposite to the first wiring, the second wiring being in a hanging state and not transmitting electric signals. By means of such a double layer wiring structure, the holes produced in the insulating layer are blocked using the second wiring in the upper layer, such that the outside moisture cannot reach the first wiring via the holes in the insulating layer, thereby protecting the first wiring for transmitting electric signals from corrosion and scratch.

Growing community of inventors

Beijing, China

Zengsheng He