Boe Technology Group Co., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Zengrong Li

Liangliang Li

Xin Chen

Kai Diao

Bin Lin

Qingna Hou

Ye Hu

Hongzhou Xie

Meizhen Chen

Ying Tian

Renhui Yu

Wen Zha

Shangtao Zheng

Fadian Le

Zhenyou Zou

Hangle Guo

Provided is an oxide thin film transistor, including a gate, a gate insulator, a channel layer, a protective layer, and a source electrode and drain electrode layer that are disposed on a base substrate, wherein the source electrode and drain electrode layer includes a source electrode and a drain electrode that are spaced; and the protective layer is disposed between the channel layer and the source electrode and drain electrode layer, and is in contact with both the source electrode and drain electrode layer and the channel layer; an orthographic projection of the protective layer on the base substrate covers an orthographic projection of the channel layer on the base substrate; and the protective layer includes a first portion, a second portion, and a third portion that are in different areas of the protective layer.

Oxide thin film transistor, method for preparing same, and display apparatus

A display panel and a display device are disclosed, relating to the display technical field. The display panel comprises a display layer and a light control layer which are laminated, the light control layer comprises a plurality of light control pixel areas, the light control pixel areas comprise a thin film transistor, the display layer comprises a plurality of display pixel areas, and the display pixel areas comprise a green sub-pixel; the orthographic projection of the green sub-pixel on the light control pixel area is close to the area where the thin film transistor is located.

Display panel and display device

Growing community of inventors

Beijing, China

Zengrong Li