Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Zeljko Spika

Volker Härle

Martin Rudolf Behringer

Johann Luft

Bruno Acklin

Werner Späth

Karl-Heinz Schlereth

Karl Joachim Ebeling

Christian Hanke

Jörg Heerlein

Lutz Korte

A radiation-emitting semiconductor body with a carrier substrate. A structured connection is produced between a semiconductor layer sequence () and a carrier substrate wafer (). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks () by means of cuts () through the semiconductor layer sequence, and the carrier substrate wafer () is subdivided into a plurality of carrier substrates () by means of cuts () through the carrier substrate wafer (). In the method, the structured connection is formed in such a way that at least one semiconductor layer stack () is connected to one and only one associated carrier substrate (). In addition, at least one cut () through the carrier substrate wafer is not extended by any of the cuts () through the semiconductor layer sequence such that a straight cut results through the carrier substrate wafer and the semiconductor layer sequence.

Radiation-emitting semiconductor body with carrier substrate and method for the production thereof

A radiation-emitting semiconductor body with a carrier substrate and a method for producing the same. In the method, a structured connection is produced between a semiconductor layer sequence () and a carrier substrate wafer (). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks () by means of cuts () through the semiconductor layer sequence, and the carrier substrate wafer () is subdivided into a plurality of carrier substrates () by means of cuts () through the carrier substrate wafer (). In the method, the structured connection is formed in such a way that at least one semiconductor layer stack () is connected to one and only one associated carrier substrate (). In addition, at least one cut () through the carrier substrate wafer is not extended by any of the cuts () through the semiconductor layer sequence such that a straight cut results through the carrier substrate wafer and the semiconductor layer sequence.

Radiation-emitting semiconductor body with carrier substrate and method for the producing the same

A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

Semiconductor laser with lateral current conduction and method for fabricating the semiconductor laser

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Wuppertal, Germany

Zeljko Spika