Camtek Ltd.

Zehava Ben Ezer

Shimon Koren

Menachem Regensburger

Tomer Gilad

Amnon Menachem

Eldad Langmans

Ophir Peleg

Shy Shapira

Guy Kafry

Yuval Weissler

Natan Deutsch

An illumination module may include a laser diode array configured to emit laser radiation; a phosphor illumination unit that is configured to emit phosphor radiation following an exposure to the laser radiation; a multiple-angle illumination unit; and intermediate optics that is configured to convey the phosphor radiation to the multiple-angle illumination unit. The multiple-angle illumination unit is configured to receive the phosphor radiation and to dark field illuminate a region of a sample wafer from multiple angles during inspection of the wafer.

Dark field illumination based on laser illuminated phosphor

There may be provided a method for inspecting a top redistribution layer conductors of an object. The top redistribution layer (RDL) is positioned above at least one lower RDL and above at least one other dielectric layer. The method may include (i) illuminating the object with radiation, the at least one lower dielectric layer significantly absorbs the radiation; (ii) generating, by a detector, detection signals that represent radiation reflected from the object, and (iii) processing, by a processor, the detection signal to provide information about the top RDL. The processing may include distinguishing detection signals related to the top RDL from detection signals related to the at least one lower RDL.

Measuring buried layers

An inspection system and a method for inspection an object. The method may include acquiring a defocused image of an area of an object, and processing the defocused image of the area to find a phase shift between optical paths associated with certain proximate points of the area. The phase shift may be indicative of a defect. The acquiring of the defocused image may include illuminating the area with a radiation beam that may be spatially coherent and collimated when impinging on the area. The illuminating may include passing the radiation beam through an aperture that may be defined by an aperture stop that may be positioned within an aperture stop plane. The size of the aperture may be a fraction of a size of the aperture stop.

Optical contrast enhancement for defect inspection

An inspection system for inspecting a semiconductor substrate, the inspection system may include an inspection unit that comprises a partially blocking bright field unit and a non-blocking bright field unit; wherein the partially blocking bright field unit is configured to block any specular reflection that fulfills the following: (a) the specular reflection is caused by illuminating, along a first axis, of an area of the wafer, (b) the specular reflection propagates along a second axis, (c) the first axis and the second axis are symmetrical about a normal to the area of the wafer, and (d) the normal is parallel to an optical axis of the partially blocking bright field unit; and wherein the non-blocking bright field unit is configured to pass to the image plane any specular reflection that fulfills the following: (a) the specular reflection is caused by illuminating, along the first axis, of an area of the wafer, (b) the specular reflection propagates along the second axis, (c) the first axis and the second axis are symmetrical about the normal, and (d) the normal is parallel to the optical axis of the partially blocking bright field unit.

Objective lens

An inspection system for inspection a surface of a substrate, the inspection system may include an interface for holding the substrate; a movement mechanism for moving the interface, thereby moving the substrate between different positions; a bright field light source that is configured to illuminate different bright field illuminated parts of the surface of the substrate when the substrate is positioned at the different positions; at least one dark field light source that is configured to illuminate different dark field illuminated parts of the surface of the substrate when the substrate is positioned at the different positions; and a camera that is configured to: (a) generate bright field detection signals in response to light that is detected by the camera as a result of the illumination of the different bright field illuminated parts; and (b) generate dark field detection signals in response to light that is detected by the camera as a result of the illumination of the different dark field illuminated parts; and wherein light that is detected by the camera as the result of the illumination of the different bright field illuminated parts and as the result of the illumination of the different dark field illuminated parts does not include an image of the camera.

System for inspecting a backside of a wafer

A method for macro inspection, the method includes: (i) concurrently illuminating a current group of spaced apart object sub areas; wherein light reflected in a specular manner from a certain object sub area of the current group of object sub areas is expected to be detected by a certain sensor element of a current group of spaced apart sensor elements that correspond to the current group of spaced apart object sub areas; wherein the object sub areas are spaced apart so as to reduce a probability of a detection of non-specular light from the object; wherein each image sub area comprises multiple pixels; (ii) obtaining image information from the current group of spaced apart sensor elements; and (iii) processing at least a portion of the image information to provide an inspection result.

Growing community of inventors

Balfuria, Israel

Zehava Ben Ezer