Chartered Semiconductor Manufacturing Ltd (corporation)

National University of Singapore

Ze Xiang Shen

Lap Chan

Alex See

Wanxin Sun

Shaoyin Chen

A novel method for forming a C54 phase titanium disilicide film in the fabrication of an integrated circuit is described. A semiconductor substrate is provided having silicon regions to be silicided. A titanium layer is deposited overlying the silicon regions to be silicided. The substrate is subjected to a first annealing whereby the titanium is transformed to phase C40 titanium disilicide where it overlies the silicon regions and wherein the titanium not overlying the silicon regions is unreacted. The unreacted titanium layer is removed. The substrate is subjected to a second annealing whereby the phase C40 titanium disilicide is transformed to phase C54 titanium disilicide to complete formation of a phase 54 titanium disilicide film in the manufacture of an integrated circuit.

Method to form C54 TiSi2 for IC device fabrication

An apertureless near-field scanning Raman microscope using reflection geometry. A laser beam focused to a small spot size on a sample onto which a silver coated metal probe is positioned. With this arrangement, it is possible to obtain enhanced near-field spectroscopy using reflection geometry. Near-field spectroscopic mapping can be done in a short time without extensive sample preparation.

Growing community of inventors

Singapore, Singapore

Ze Xiang Shen