Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Ze-Dong Gao

Ming Zhao

Li Hui Guo

Ming-Jie Cao

Da-Ming Zhuang

Yao-Wei Wei

A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising InCeZnO, wherein x=0.5&#x2dc;2.

Method for making oxide semiconductor film

A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5&#x2dc;2.

Method for making thim film transistor

A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.

Thim film transistor and method for making the same, thim film transistor panel and display device

An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising InCeZnO, wherein x=0.5&#x2dc;2.

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Beijing, China

Ze-Dong Gao