Huawei Technologies Co., Limited

Zanfeng Chen

Zhe Liu

Xiaolong Ma

Yanxiang Liu

Yu Xia

Yongjie Zhou

Huabin Chen

Sunhom Steve Paak

Daxiang Wang

Philippe Muller

This application provides an integrated circuit device and a preparation method thereof, and relates to the field of semiconductor technologies. An isolation section for suppressing a leakage current path of two adjacent transistors may be formed by using a simple process. The integrated circuit device includes a substrate and a fin protruding from the substrate. The integrated circuit device further includes two adjacent transistors. The two adjacent transistors use two spaced segments on the fin as respective channels of the two adjacent transistors. A part that is of the fin and that is located between the two spaced segments is processed to obtain an isolation section. The isolation section is used to suppress current transfer between the two channels of the two adjacent transistors.

Integrated circuit device and preparation method thereof

Growing community of inventors

Shenzhen, China

Zanfeng Chen