Applied Materials, Inc.

Zakaria Ibrahimi

Juan Carlos Rocha-Alvarez

Deenesh Padhi

Tza-Jing Gung

Xinhai Han

Jonghoon Baek

Daemian Raj Benjamin Raj

Shailendra Srivastava

Masaki Ogata

Nikhil Sudhindrarao Jorapur

Wenjiao Wang

Sai Susmita Addepalli

Gregory Eugene Chichkanoff

Kristopher R Enslow

An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

Film stack overlay improvement

Growing community of inventors

Santa Clara, CA, United States of America

Zakaria Ibrahimi