Texas Instruments Corporation

Zafar Imam

Weidong Tian

Bradley David Sucher

Pinghai Hao

Xiaoju Wu

Shanjen Pan

Yvonne Patton

Larry B Anderson

Fan Chi Hou

The present invention provides a system for dissipating any aberrant charge that may accumulate during the fabrication of a semiconductor device segment (), obviating overstress or break down damage to a focal device structure () that might result from uncontrolled dissipation of the aberrant charge. A substrate () has first and second intermediate structures () disposed atop the substrate, with the focal structure disposed atop the substrate therebetween. A first conductive structure () is disposed atop the second intermediate structure, the focal structure, and a portion of the first intermediate structure. A third intermediate structure () is disposed contiguously atop the first conductive structure and the first intermediate layer. A void () is formed in a peripheral region () of device segment, through the first and third intermediate layers down to the substrate. A second conductive structure () is disposed atop the third intermediate structure such that it couples the substrate through the void.

Versatile system for charge dissipation in the formation of semiconductor device structures

The present invention provides, in one embodiment, a method of reducing 1/f noise in a metal oxide semiconductor (MOS) device (). The method comprises forming an oxide layer () on a silicon substrate () and depositing a polysilicon layer () on the oxide layer (). The method further includes implanting a fluorine dopant () into the polysilicon layer () at an implant dose of at least about 4&#xd7;10atoms/cm. The polysilicon layer () is thermally annealed such that a portion of the fluorine dopant () is diffused into the oxide layer () to thereby reduce a 1/f noise of the MOS device (). Other embodiments of the provide a MOS device () manufactured by the above-described method and a method of manufacturing an integrated circuit () that includes the above-described method.

Method for manufacturing a MOS transistor having reduced 1/f noise

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Dallas, TX, United States of America

Zafar Imam