Silterra Malaysia Sdn. Bhd.

Zadig Lam

Hitomi Watanabe

Naoto Inoue

Min Paek

Sang Yeon Kim

Inki Kim

Chiew Sin Ping

Wan Gie Lee

Choong Shiau Chien

Lim Chin Teong

Li Kuo Wei

Jeong Soo Kim

A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact. Thereafter, a first gate oxide having a first thickness is formed on the first active region, the first gate oxide having a first edge facing the first isolation structure and a second edge facing the second isolation structure. The first edge is separated from the first isolation structure by a first distance. The second edge is separated from the second isolation structure by a second distance. Thereafter, a second gate oxide having a second thickness is formed on the second active region, the second thickness being different than the first thickness.

Semiconductor device with dual gate oxides

A method for aligning a substrate on a lithographic apparatus includes providing a substrate having a first plurality of grating marks optimized for a beam of a first given diffraction order and a second plurality of grating marks optimized for a beam of a second given diffraction order on a lithographic apparatus. A first signal is generated using a first beam reflected from the first grating marks, the first beam being a beam of the first given diffraction order. A second signal is generated using a second beam reflected from the second grating marks, the second beam being a beam of the second given diffraction order. The substrate is aligned with respect to the apparatus using the first and second signals.

Dual phase grating alignment marks

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Singapore, Singapore

Zadig Lam