Invisage Technologies, Inc.

Apple Inc.

Invisage Inc.

Zachary Michael Beiley

Emanuele Mandelli

Aurelien Philippe Bouvier

Ralph Beaudouin

Dario Clocchiatti

Lionel Barrymore Joseph Barrow

Edward Hartley Sargent

Robin W Cheung

Xiaofeng Fan

Gennadiy A Agranov

Xiangli Li

Nikolai E Bock

Oray Orkun Cellek

Gershon Rosenblum

Bernhard Buettgen

Andras G Pattantyus-abraham

Yuchuan Shao

Yu-Hua Chang

Richard W Snow

A sensor stack is described. The sensor stack includes first and second electromagnetic radiation sensors. The first electromagnetic radiation sensor has a high quantum efficiency for converting a first range of electromagnetic radiation wavelengths into a first set of electrical signals. The second electromagnetic radiation sensor is positioned in a field of view of the first electromagnetic radiation sensor and has a high quantum efficiency for converting a second range of electromagnetic radiation wavelengths into a second set of electrical signals and a low quantum efficiency for converting the first range of electromagnetic radiation wavelengths into the second set of electrical signals. The first range of wavelengths does not overlap the second range of wavelengths, and the second electromagnetic radiation sensor is at least partially transmissive to the first range of electromagnetic radiation wavelengths.

Stacked electromagnetic radiation sensors for visible image sensing and infrared depth sensing, or for visible image sensing and infrared image sensing

In various embodiments, image sensors and methods of operating the image sensors are disclosed. In an example embodiment, a pixel circuit having a first electrode is coupled to a reset transistor and to a first region of an optically sensitive layer, and a second electrode is coupled to a pixel sense node and to a second region of an optically sensitive layer. The electrical path from the first electrode, through the optically sensitive layer, and into the second electrode functions as a variable resistor. Other devices and methods of operating the devices are disclosed.

Image sensors with noise reduction

Imaging apparatus () includes a photosensitive medium () configured to convert incident photons into pairs of electrons and holes. An array of pixel circuits () is formed on a semiconductor substrate (). Each pixel circuit defines a respective pixel and includes an electron-collecting electrode () in contact with the photosensitive medium at a first location in the pixel and a hole-collecting electrode () in contact with the photosensitive medium at a second location in the pixel. Circuitry () is coupled to apply a positive potential to and collect the electrons from the electron-collecting electrode and to apply a negative potential to and collect the holes from the hole-collecting electrode and to output a signal indicative of an intensity of the incident photons responsively to the collected electrons and holes.

Image sensor with electron and hole collection electrodes

A method for fabricating an optoelectronic device includes forming an isolation structure between an array of pixel electrodes and a built-in pad (BIP) on a dielectric layer of an integrated circuit, depositing a photosensitive film over the dielectric layer, such that at least one pinch point is formed in the photosensitive film at an edge of the isolation structure. The method further includes depositing an electrode layer, which is at least partially transparent, over the photosensitive film, etching away the photosensitive film from the BIP, and after etching away the photosensitive film, depositing a metal layer over the BIP and in contact with the electrode layer.

Isolation structures in film-based image sensors

In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under one range of biases on the device, the photosensitive layer produces a photocurrent while illuminated. Under another range of biases on the device, the photosensitive does not produce a photocurrent while illuminated. A carrier selective layer expands the range of biases over which the photosensitive layer does not produce any photocurrent while illuminated. In various embodiments, an electronic device comprises, for example, at least one photosensitive layer and at least one carrier selective layer. Under a first range of biases on the device, the photosensitive layer is configured to collect a photocurrent while illuminated. Under a second range of biases on the device, the photosensitive layer is configured to collect at least M times lower photocurrent while illuminated compared to under the first range of biases.

High-performance image sensors including those providing global electronic shutter

Growing community of inventors

Oakland, CA, United States of America

Zachary Michael Beiley