Vishay-siliconix

Newport Fab, LLC

Zachary Lee

Deva N Pattanayak

A process for forming a short channel trench MOSFET. The process includes forming a first implant at the bottom of a trench that is formed in the body of the trench MOSFET and forming a second or angled implant that is tilted in its orientation and directed perpendicular to the trench that is formed in the body of the trench MOSFET. The second implant is adjusted so that it does not reach the bottom of the trench. In one embodiment the angled implant is n-type material.

Process for forming a short channel trench MOSFET and device formed thereby

According to an exemplary embodiment, a MOS transistor, such as an LDMOS transistor, includes a gate having a first side situated immediately adjacent to at least one source region and at least one body tie region. The MOS transistor further includes a drain region spaced apart from a second side of the gate. The MOS transistor further includes a body region in contact with the at least one body tie region, where the at least one body tie region is electrically connected to the at least one source region. The MOS transistor further includes a lightly doped region separating the drain region from the second side of the gate. The lightly doped region can isolate the body region from an underlying substrate.

Growing community of inventors

Lake Forest, CA, United States of America

Zachary Lee