Applied Materials, Inc.

Wayne State University

Zachary J Devereaux

Mark Joseph Saly

Bhaskar Jyoti Bhuyan

Thomas Knisley

Abhijit Basu Mallick

Susmit Singha Roy

Charles H Winter

Zeqing Shen

Shalini Tripathi

A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.

Electronic device fabrication using area-selective deposition

Metal complexes with nitrile ligands of the type MOXL, where M is molybdenum or tungsten, X is a halogen, each L is independently an organonitrile ligand with the general formula NCR, where each R is independently a C2-C18 group. Metal complexes with dinitrile bidentate ligands of the type MOXL', where L′ is a dintrile ligand, and dinitrile bridging ligands of the type (MOX)L′, where L′ is a dinitrile bridging ligand connecting the two metal atoms. Methods of making and using the metal complexes are described.

Metal organonitrile precursors for thin film deposition

Growing community of inventors

Webberville, MI, United States of America

Zachary J Devereaux