Beijing Tongmei Xtal Technology Co., Ltd.

Yvonne Zhou

Weiguo Liu

Rajaram Shetty

Yuanli Wang

Sung-Nee George Chu

A germanium single-crystal wafer comprises silicon with an atomic concentration of from 3×10atoms/cc to 10×10atoms/cc, boron with an atomic concentration of from 1×10atoms/cc to 10×10atoms/cc, and gallium with an atomic concentration of from 1×10atoms/cc to 10×10atoms/cc. Further provided are a method for preparing the germanium single-crystal wafer, a method for preparing a germanium single-crystal ingot, and the use of the germanium single-crystal wafer for increasing the open-circuit voltage of a solar cell. The germanium single-crystal wafer has an improved electrical property in that it has a smaller difference in resistivity and carrier concentration.

Germanium single-crystal wafer, method for preparing germanium single-crystal wafer, method for preparing crystal bar, and use of single-crystal wafer

A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.

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Fremont, CA, United States of America

Yvonne Zhou