Texas Instruments Corporation

Yvonne Patton

Pinghai Hao

Xiaoju Wu

Shanjen Pan

Zafar Imam

Larry B Anderson

Fan Chi Hou

The present invention provides, in one embodiment, a method of reducing 1/f noise in a metal oxide semiconductor (MOS) device (). The method comprises forming an oxide layer () on a silicon substrate () and depositing a polysilicon layer () on the oxide layer (). The method further includes implanting a fluorine dopant () into the polysilicon layer () at an implant dose of at least about 4&#xd7;10atoms/cm. The polysilicon layer () is thermally annealed such that a portion of the fluorine dopant () is diffused into the oxide layer () to thereby reduce a 1/f noise of the MOS device (). Other embodiments of the provide a MOS device () manufactured by the above-described method and a method of manufacturing an integrated circuit () that includes the above-described method.

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Plano, TX, United States of America

Yvonne Patton