Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thomson-csf

Stmicroelectronics S.a.

Thomson Composants Militaires Et Spatiaux

Stmicroelectronics (crolles 2) Sas

Commissariat a L'energie Atomique

Stmicroelectronics Gmbh

Stmicroelectronics (grenoble 2) Sas

Commissariat a L'energie Atomique Et Aux Energies

Thomson-csf Semiconducteurs Specifiques

Thomson-lsf

Stmicroelectronics (rousset) Sas

Yvon Cazaux

Benoit Giffard

Louis Brissot

Marie Guillon

François Roy

Gilles Boucharlat

Didier Herault

Francois Roy

Frédéric Barbier

Jean-Luc Berger

Alexis Rochas

Jean L Berger

Xavier Hugon

Pierre Blanchard

Arnaud Laflaquiere

Norbert Moussy

Jean-Louis Coutures

Yves Thenoz

Pierre Dautriche

Boris Rodrigues

Philippe Coronel

Laurent Frey

Pierre Gidon

Josep Segura Puchades

Arnaud Peizerat

Jérôme Vaillant

François Ayel

Boris Rodrigues Goncalves

Claire Fenouillet-Béranger

Bruno Gili

Jean-Alain Cortiula

Gaelle Palmigiani

Jean-Joseph Chabbal

Michäel Tchagaspanian

Benoît Giffard

Jean Marine

Clémence Jamin

A device of acquisition of a depth image of a scene by detection of a reflected light signal. The device includes a stack of a first sensor and of a second sensor. The first sensor includes first depth photosites configured to acquire at least one first sample of charges photogenerated during first time periods. The second sensor includes second depth photosites arranged opposite the first photosites, the second photosites being configured to acquire at least one second sample of charges photogenerated during second time periods offset with respect to the first time periods by a first constant phase shift. The first sensor or the second sensor further includes third photosites configured to acquire at least one third sample during third time periods offset with respect to the first time periods by a second constant phase shift.

Device of acquisition of a depth image of a scene

An image sensor including a plurality of pixels, each including: a semiconductor photodetection region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band elimination interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, a portion of the absorbing layer made of a material different from that of the semiconductor region, the absorbing layer being capable of absorbing, in a single passage, more than 30% of an incident radiation at the central wavelength of the pass band or of the stop band of the interference filter.

Image sensor

A device of acquisition of a 2D image and of a depth image, including: a first sensor including a front surface and a rear surface, the first sensor being formed inside and on top of a first semiconductor substrate and including a plurality of 2D image pixels and a plurality of transmissive windows; and a second sensor including a front surface placed against the rear surface of the first sensor and a rear surface opposite to the first sensor, the second sensor being formed inside and on top of a second semiconductor substrate and comprising a plurality of depth pixels arranged opposite the windows of the first sensor.

Device for acquiring a 2D image and a depth image of a scene

A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.

Time-of-flight detection pixel

A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.

The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem) electrically coupled to the detection zone by a first gate (); a second memory (mem) electrically coupled to the detection zone by a second gate (); and a third memory (mem) electrically coupled to the detection zone by a third gate (), wherein the first, second and third memories are each formed by a doped region sandwiched between first and second parallel straight walls (), the first and second walls of each memory having a conductive core adapted to receive a biasing voltage; and a plurality of 2D image pixels (Pto P) positioned adjacent to the depth pixel, wherein the first, second and third memories extend to form at least partial isolation walls between corresponding adjacent pairs of the 2D image pixels.

Image sensor for capturing 2D image and depth

An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.

Image sensor with vertical electrodes

The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.

Visible and near-infrared radiation detector

The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (); and a further node (AN) coupled to the sensing node (SN) via a first transistor (); and a control circuit () adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.

Image sensor pixel having multiple sensing node gains

The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.

Monolithic multispectral visible and infrared imager

An image sensor arranged inside and on top of a semiconductor substrate, having a plurality of pixels, each including: a photosensitive area, a read area, and a storage area extending between the photosensitive area and the read area; at least one first insulated vertical electrode extending in the substrate between the photosensitive area and the storage area; and at least one second insulated vertical electrode extending in the substrate between the storage area and the read area.

A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

Pinned photodiode CMOS image sensor with a low supply voltage

Time delay and integration sensor comprising a matrix of photosensitive pixels organized in rows and columns. Each pixel of a column comprises a photosensitive element, a storage node, and a first transfer transistor connecting the photosensitive element to the storage node. Each pixel of a column, except for the last one, further comprises a second transfer transistor which connects the storage node of the pixel to the photosensitive element of the next pixel of the column. The two transfer transistors are connected to be active at the same time. With such a configuration, it is possible to define a sliding group of several consecutive pixels in a column, to expose the group of pixels, to aggregate the information of the pixels of the group, and to start again after shifting the group of pixels by one pixel.

CMOS linear image sensor with motion-blur compensation

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Grenoble, France

Yvon Cazaux