Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Yves Samson

Serge Gidon

Matthieu Jamet

Bernard Dieny

Franck Fournel

Bernard Bechevet

Patrick Warin

Anatoly Vedyaev

André Barski

Thibaut Devillers

Jérôme Faure-Vincent

Olivier Bichet

The inventive ferromagnetic semiconductor comprises at least one magnetic element selected from the group consisting of Mn, Fe, Co, Ni and Cr, and has a Curie temperature which is equal to or higher than 350 K, and advantageously 400 K or higher. The semiconductor has a matrix which is depleted in magnetic element(s) and contains a discontinuous phase which is formed from columns, enriched with magnetic elements, and is ferromagnetic up to said Curie temperature, in such a way as to generate a lateral modulation of the composition of the semiconductor in the plane of the thin layer. Also disclosed is a method for the production of the semiconductor, a diode-type electronic component for the injection or collection of spins into or from another semiconductor respectively, or an electronic component which is sensitive to a magnetic field, and uses of the semiconductor relating to such a component.

Ferromagnetic semiconductor, method for the production thereof, components incorporating the same, and corresponding uses of said semiconductor

The invention relates to a method for realizing a particle network comprising a particle depositing step, capable of self-organizing with a determined increment along a first direction, onto a substrate exhibiting a property that permits an interaction between the substrate and the particles and modulated along the first direction with a period adapted to said increment. A substantial interaction thus subsists between each of the particles and its neighboring particles along the first direction.

Particle network comprising particles disposed on a substrate and method for realizing such a network

The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (), itself comprising: a reference magnetic layer () having magnetization in a direction that is fixed; a storage magnetic layer () having magnetization in a direction that is variable; and an intermediate layer () acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer () from the storage magnetic layer (). The potential profile of the intermediate layer () is asymmetrical across the thickness of said layer () so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.

Magnetoresistive tunnel junction magnetic device and its application to MRAM

The invention relates to a data-recording device comprising conductive microtips and to the production method thereof. According to the invention, the microtip comprises one end which is intended to be brought into electrical contact with a recording medium. Moreover, the microtip comprises a longitudinal conducting core having an essentially constant cross-section. In addition, the microtip is surrounded by a sheath of non-conducting material, such that the free ends of the core and the sheath are level at the end of the microtip. The cross-section of the sheath can diminish towards the end of the microtip, e.g. such as to form a truncated-cone-shaped part. The core can comprise a carbon nanotube. Furthermore, a multitude of microtips can be disposed in the form of a network, the ends thereof generating an essentially-flat common surface. The inventive method comprises an abrasion step.

Data recording device with conducting microtips and production method thereof

The invention relates to a data recording device comprising microtips and a recording medium. The recording medium comprises a substrate with a preferably-carbon resistive layer disposed thereon, said resistive layer being covered with an active layer. According to the invention, the aforementioned active layer can pass from a first electrical resistivity value to a second electrical resistivity value when a voltage is applied between the microtips and a counter electrode. The inventive data recording device also comprises at least one carbon resistive element which is disposed between the active layer and the microtips.

Data recording device comprising micro-tips and a recording medium

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Saint Martin d'Heres, France

Yves Samson