S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Yves-Mathieu Le Vaillant

Bruno Ghyselen

Cécile Aulnette

Takeshi Akatsu

Bénédite Osternaud

A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting projections or rough portions on its surface. The protective layer prevents removal of the entire buffer structure when the post detachment layer is removed.

Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom

A tool for disuniting two wafers, at least one of which is for use in fabricating substrates for microelectronics, optoelectronics, or optics, the tool comprising two gripper members suitable for being fixed temporarily to respective opposite faces of the two wafers that are united with each other, and a disuniting control device suitable for moving said members relative to each other. The tool is remarkable in that the disuniting control device comprises an actuator for positively displacing said gripper members and for inducing controlled flexing in at least one of said members. This makes it easier to disunite the wafers while reducing the risk of damaging them. The invention is applicable to disuniting wafers that have been weakened by implantation, that have been temporarily bonded together, etc.

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Crolles, France

Yves-Mathieu Le Vaillant