The University of Texas System

Versum Materials Us, LLC

Lucent Technologies Inc.

Yves Jean Chabal

Xinjian Lei

Moo-Sung Kim

George K Celler

Anupama Mallikarjunan

Kui Tan

Luis Fabián Peña

Aaron Michael Dangerfield

Luis Fabián PEÑA

Moo-sung Kim

Described herein are methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a nitrogen source and an inert gas into the reactor to react with at least a portion of the chemisorbed layer; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.

Methods for depositing a conformal metal or metalloid silicon nitride film

In some aspects, the present disclosure provides compositions comprising a nanoporous material such as a metal organic framework and an amine containing compound. In some aspects, these compositions may be used to improve the affinity of a guest molecule to the nanoporous material relative a nanoporous material which had not been treated with the amine containing compound.

Storing molecule within porous materials with a surface molecular barrier layer

Growing community of inventors

Richardson, TX, United States of America

Yves Jean Chabal