Cadeka Microcircuits, LLC

Technologies Ltrim Inc.

Ltrim Technologies Inc.

Yves Gagnon

Yvon Savaria

Alain Lacourse

Michel Meunier

Hugo St-Jean

Mathieu Ducharme

Hugues Langlois

Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.

Tunable semiconductor component provided with a current barrier

A method is provided for tuning (i.e. modifying, changing) the impedance of semiconductor components or devices using a focused heating source. The method may be exploited for finely tuning the impedance of semiconductor components or devices, by modifying the dopant profile of a region of low dopant concentration (i.e. increasing the dopant concentration) by diffusion of dopants from adjacent regions of higher dopant concentration through the melting action of a focused heating source, for example a laser. The present invention is in particular directed to the use of lasers in relation to circuits for the creation of conductive links and pathways where none existed before. The present invention more particularly relates to a means wherein impedance modification (i.e. trimming or tuning) may advantageously be carried out as a function of the location of one or more conductive bridge(s) along the length of a gap region.

Method for modifying the impedance of semiconductor devices using a focused heating source

The invention relates to a method of iteratively, selectively tuning the impedance of integrated semiconductor devices, by modifying the dopant profile of a region of low dopant concentration by controlled diffusion of dopants from one or more adjacent regions of higher dopant concentration through the melting action of a focussed heating source, for example a laser. In particular the method is directed to increasing the dopant concentration of the region of lower dopant concentration, but may also be adapted to decrease the dopant concentration of the region.

Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source

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Owen Sound, Canada

Yves Gagnon