Agere Systems Inc.

Agere Systems Guardian Corp.

Yves Chabal

Glen D Wilk

Martin Laurence Green

Martin Michael Frank

George K Celler

The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.

Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate

The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a substrate. The seed layer is formed by removing hydrogen forming the substrate, depositing a seed layer precursor and exposing the precursor to excited atoms to form a seed layer on the substrate.

Semiconductor device using an insulating layer having a seed layer

The present invention provides a method of manufacturing a semiconductor device comprising, providing a semiconductor substrate, forming a substantially-hydroxylated SiO H layer on the semiconductor substrate in a presence of oxygen and hydrogen, and forming a metallic oxide, high-K dielectric layer on the substantially-hydroxylated SiO H layer. The substantially-hydroxylated SiO H layer has a surface concentration of hydroxyl (OH) species equal to or greater than about 3&times;10 hydroxyl per cm .

Semiconductor device having a high-K gate dielectric and method of manufacture thereof

An integrated circuit comprising active and passive devices is formed in a thin slice of monocrystalline semiconductor bonded to a high resistivity polycrystalline silicon substrate. As compared with conventional integrated circuits supported on a monocrystalline substrate, circuits in monocrystalline films bonded to high resistivity polycrystalline substrates are less subject to parasitic capacitance, crosstalk and eddy currents. As compared with typical SOI wafers, the polycrystalline substrates have higher resistivity, and this resistivity is much less affected by contamination than it would be in monocrystalline substrates. Compared to silicon-on-sapphire or silicon on any other insulating material, the polycrystalline substrates are more compatible with the mechanical, thermal, and optical properties of the crystalline silicon layer.

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Holmdel, NJ, United States of America

Yves Chabal