Thomson-csf

Yves Archambault

Alain Bert

Bernard Epsztein

Didier Kaminsky

Bernard Le Clerc

Dimitrios Pavlidis

Bernard Leclerc

Leonidas Karapuperis

The invention provides a variable capacity diode with a plane structure so that it may be formed in an integrated circuit, this diode has, on the substrate, three coplanar regions. The first and second uniformly doped regions support the contact making metallizations. The transition region has a variation of doping level, low at one end and high at the other end. This variation is obtained by implantation by means of a focused ion beam, with constant energy and sweeping at increasing doses, which allows a hyperabrupt profile to be obtained. The diode is a p-n junction of Schottky contact diode.

Variable capacity diode with hyperabrupt profile and plane structure and

That face of the non-epitaxied substrate of high resistivity which supports the junction 3 formed by the planar method is treated by a mesa attack in such a way that it is smaller than the opposite face 7. An insulating ring 4 covers the periphery of the junction and projects beyond the substrate. This ring has external dimensions smaller than those of the face 7 beyond which it projects. A metallic layer 6 ensuring an ohmic contact covers in particular the lateral walls of the diode created by the mesa attack except for those zones of these walls beyond which the insulating ring 4 projects. This metallization of the lateral walls acts as an electrode and connects the diodes generally formed on one and the same substrate to one another.

Acoustic storage device intended in particular for the correlation of

Parametric coupling device for traveling-waves, comprising a first signal wave, a second idler wave and a third pump wave, wherein a transmission line for said traveling-waves is formed on a substrate of dielectric material, which comprises a virtually continuous network of non-linear interaction elements, modulated by the pump wave, and so modulating the conduction properties of the transmission line and enabling intermodulation to be set up between the various traveling-waves. The virtually continuous network of non-linear interaction elements is a substantially plane network, each non-linear interaction element being at a distance a, or pitch of the network, from a neighbouring non-linear element, the distance a being less than the smallest of the wavelength of the signal, idler and pump waves and the plane network being disposed in the neighborhood of the upper surface of the transmission line.

Parametric coupling device for traveling-waves

A microwave oscillator in which the power supplied by 2N microwave diodes such as avalanche or Gunn effect diodes is added. The diodes are connected together in two by sections of strip lines which enables magnetic coupling between these diodes and a dielectric resonator, with the diodes in each couple operating in phase opposition.

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Paris, France

Yves Archambault