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Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Thales

Yveline Gobil

Yves Morand

Hélène Le Poche

Barbara Charlet

Jérôme Biscarrat

Olivier Demolliens

Myriam Assous

A high electron mobility transistor includes a stack of layers including a passivation layer and a heterojunction including a first semiconductor layer, a second semiconductor layer and a two-dimensional electron gas at the interface thereof, one surface of the passivation layer being in contact with the first semiconductor layer; a source metal contact and/or a drain metal contact and a gate electrode; an n+ doped zone situated inside the heterojunction; the source metal contact and/or the drain metal contact being positioned at the level of a recess formed in the stack of layers, the source metal contact and/or said drain metal contact having a thickness defined by an upper face and a lower face substantially parallel to the plane of the layers, the upper face being planar, the lower face being in contact with the n+ doped zone and below the interface between the first and second semiconductor layers.

High electron mobility transistor with reduced access resistance and method for manufacturing a high electron mobility transistor with reduced access resistance

The invention relates to a method for protecting the interior of at least one cavity () having a portion of interest () and opening onto a face of a microstructured element (), consisting of depositing, on said face, a nonconformal layer () of a protective material, in which said nonconformal layer closes off the cavity without covering the portion of interest. The invention also relates to a method for producing a device comprising such a microstructured element.

Protection of cavities opening onto a face of a microstructured element

The invention relates to a process for making a copper connection with a copper connection element in an integrated circuit comprising a damascene structure, with the connection element being covered successively with an encapsulation layer and at least one layer of dielectric material with a very low dielectric constant. The process includes the steps of etching the layer of dielectric material until the encapsulation layer is reached in order to obtain a connection hole opposite the connection element. A protective layer is then formed on the walls of the connection hole, with the protective layer preventing contamination of the dielectric layer from diffusion of copper. The protective and encapsulation layers are then etched at the bottom of the connection hole in such a way as to reveal the connection element. The connection hole is then filled with copper.

Method for producing a copper connection

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Grenoble, France

Yveline Gobil