Thomson-csf

Yvan Raverdy

Jean Luc Ploix

Christian Baud

Henri Hougeot

A method for drilling microscopic passages in a semiconductor body. The semiconductor 1 is incorporated into the anode of an electrolysis installation, one of its faces being in contact with the electrolyte 11 and the other containing a hole injection system. The holes migrate in the electric field from one face to the other; at the latter, dissolution of the semiconductor face in the electrolyte takes place. Gradually, passages are bored through the semiconductor along the trajectories of the holes. In the example, the holes are created photoelectrically in the gaps 2 between the opaque parts 4 applied to the transparent anode contact 3.

Method for producing microscopic passages in a semiconductor body for

An information display device utilizing the phenomenon of electrophoresis. It comprises two transparent electrodes parallel to one another and assembled in order to constitute a sealed cell filled with a colored fluid, and a thin porous diaphragm scattering the light in a color differing from that of the fluid, the diaphragm being arranged in the vessel parallel to the electrodes. The diaphragm displaces by electrophoresis, from one electrode to the other, under the action of potential differences applied to the electrodes.

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Paris, France

Yvan Raverdy