Tokyo Electron Limited

Yuzuru Sakai

Ryo Terashima

Kazuki Moyama

Naokazu Furuya

Yosuke Tamuro

Takashi Tohara

A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a movable member and a stationary member each disposed around the substrate support, the movable member having a plurality of moving blades, the plurality of moving blades being rotatable, the stationary member having a plurality of stationary blades, the plurality of moving blades and the plurality of stationary blades being alternately disposed along a height direction of the plasma processing chamber, and an exhaust space being formed beneath the movable member and the stationary member; a first driver configured to rotate the movable member; a pressure regulating member movably disposed around the substrate support and above the movable member and the stationary member; and a second driver configured to move the pressure regulating member.

Plasma processing apparatus

A plasma processing apparatus includes a plurality of plasma processing chambers, a process gas supply line that supplies a plasma processing gas to the plasma processing chambers, a first additive gas supply line that supplies an additive gas to the plasma processing chambers, an exhaust space shared by the plurality of plasma processing chambers, and a controller. The controller determines a first plasma processing chamber group and a second plasma processing chamber group. The first plasma processing chamber group includes one or more plasma processing chambers, each of which performs the plasma processing and the second plasma processing chamber group includes one or more plasma processing chambers, each of which does not perform the plasma processing. The controller causes the additive gas to be supplied to the one or more plasma processing chambers of the second plasma processing chamber group from the first additive gas supply line.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes: a chamber accommodating a plurality of substrates; a plurality of substrate supports provided inside the chamber and configured to support a substrate; a plurality of radio-frequency power sources provided corresponding to the plurality of substrate supports, and configured to supply radio-frequency power to the plurality of substrate supports, respectively; and a plurality of shields configured to compart the inside of the chamber and provided corresponding to the plurality of substrate supports to define a processing space where plasma is generated. A radio-frequency current path is formed between the plurality of shields so as not to interfere with one another.

A plasma processing method of etching an organic film through a mask having an opening is provided. The mask is formed on the organic film, and is made of a silicon-containing film. The method includes rectifying a shape of the mask. The rectifying of the shape of the mask includes refining a side wall of the opening of the mask, and etching an upper surface of the mask.

Growing community of inventors

Miyagi, Japan

Yuzuru Sakai