Hitachi, Ltd.

Yuzuru Oji

Masahiko Hiratani

Shinpei Iijima

Yasuhiro Sugawara

Naruhiko Nakanishi

Misuzu Kanai

An integrated semiconductor device has an improved reliability and is adapted to a higher degree of integration without reducing the accumulated electric charge of each information storage capacity element. The semiconductor device is provided with a DRAM having memory cells, each comprising an information storage capacity element C connected in series to a memory cell selection MISFET Qs formed on a main surface of a semiconductor substrate and having a lower electrode , a capacity insulating film and an upper electrode . The lower electrode is made of ruthenium film oriented in a particular plane bearing, e.g., a (002) plane, and the capacity insulating film is made of a polycrystalline tantalum film obtained by thermally treating an amorphous tantalum oxide film containing crystal of tantalum oxide in an as-deposited state for crystallization.

Method of forming a semiconductor device with a capacitor including a polycrystalline tantalum oxide film dielectric

An integrated semiconductor device has an improved reliability and is adapted to a higher degree of integration without reducing the accumulated electric charge of each information storage capacity element. The semiconductor device is provided with a DRAM having memory cells, each comprising an information storage capacity element C connected in series to a memory cell selection MISFET Qs formed on a main surface of a semiconductor substrate and having a lower electrode a capacity insulating film and an upper electrode The lower electrode is made of ruthenium film oriented in a particular plane bearing, e.g., a (002) plane, and the capacity insulating film is made of a polycrystalline tantalum film obtained by thermally treating an amorphous tantalum oxide film containing crystal of tantalum oxide in an as-deposited state for crystallization.

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Hinode, Japan

Yuzuru Oji