Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Yuzuru Mochizuki

Toshiyuki Yokosuka

Minoru Yamazaki

Yuko Sasaki

Tomohito Nakano

Maki Tanaka

Hideyuki Kazumi

Yoshinobu Kimura

Takashi Doi

Satoru Yamaguchi

Natsuki Tsuno

Takafumi Miwa

Miki Isawa

Naoki Akimoto

There is provided a charged particle beam system having a computer system for controlling an acceleration voltage of a charged particle beam emitted from a charged particle source, the system including: a first diaphragm group having first and second diaphragms which are diaphragms that act on the charged particle beam and have different thicknesses; and a first diaphragm switching mechanism for switching the diaphragm in the first diaphragm group, in which the computer system controls the first diaphragm switching mechanism so as to switch from the first diaphragm to the second diaphragm according to an increase or decrease of the acceleration voltage.

Charged particle beam system

A charged particle beam device includes an electron source which generates an electron beam, an objective lens which is applied with a coil current to converge the electron beam on a sample, a control unit which controls the current to be applied to the objective lens, a hysteresis characteristic storage unit which stores hysteresis characteristic information of the objective lens, a history information storage unit which stores history information related to the coil current, and an estimation unit which estimates a magnetic field generated by the objective lens on the basis of the coil current, the history information, and the hysteresis characteristic information.

Charged particle beam device and capturing condition adjusting method in charged particle beam device

A charged particle beam apparatus with reduced frequency of lens resetting operations and thus with improved throughput. The apparatus includes an electron source configured to generate an electron beam, an objective lens to which coil current is adapted to be applied to converge the electron beam on a sample, a focal position adjustment device configured to adjust the focal position of the electron beam, a detector configured to detect electrons from the sample, a display unit configured to display an image of the sample in accordance with a signal from the detector, a storage unit configured to store information on the hysteresis characteristics of the objective lens, and an estimation unit configured to estimate a magnetic field generated by the objective lens on the basis of the coil current, the amount of adjustment of the focal position by the focal position adjustment device, and the information on the hysteresis characteristics.

Charged particle beam apparatus and method for adjusting imaging conditions for the same

Provided are a pattern measuring apparatus and a computer program which determine whether a gap formed in a sample () is a core gap () or a spacer gap (). The secondary electron profile of the sample () is acquired, the feature quantities of the secondary electron profile at the positions of edges () are detected, and based on the detected feature quantities, whether each gap adjacent to each of the edges () is the core gap () or the spacer gap () is determined. Furthermore, the waveform profile of the spacer () is previously stored, the secondary electron profile of the sample () is acquired, a matching degree of the secondary electron profile and the stored waveform profile at the position of each spacer () is detected, and based on the detected matching degree, whether the each gap adjacent to each spacer () is the core gap () or the spacer gap () is determined.

Pattern measuring apparatus and computer program

The present invention is characterized by an electron microscope which intermittently applies an electron beam to a sample and detects a secondary electron signal, wherein an arbitrarily defined detection time (T) shorter than the pulse width (Tp) of the applied electron beam is selected, and a secondary electron image is formed using the secondary electron signal acquired during the detection time. Consequently, it is possible to reflect necessary sample information including the internal structure and laminated interface of the sample in the contrast of an image and prevent unnecessary information from being superimposed on the image, thereby making it possible to obtain the secondary electron image with improved sample information selectivity and image quality.

Electron microscope and image capturing method using electron beam

Growing community of inventors

Tokyo, Japan

Yuzuru Mochizuki