Mitsubishi Denki Kabushiki Kaisha

Yuzuru Konishi

Kazunori Taguchi

Tokumitsu Sakamoto

Kyotaro Hirasawa

Nobuhisa Nakashima

Kyoutaro Hirasawa

It is an object of the present invention to fix a semiconductor substrate and a thermal compensating plate in the alloy-free structure. An insulation resin (23) for side wall protection fixed on the outer periphery of a semiconductor substrate (1) and a projection (6a) inside an insulation tube are bonded with an adhesive agent (24) to restrict movements of the semiconductor substrate (1) in the radial direction. A thermal compensating plate (3) and a main electrode (5) are normally positioned with each other by a screw pin (32). A fixing ring (30) having resin or metal such as aluminum or the like which fits to the outer peripheral side of the main electrode (4) and the outer peripheral side of the thermal compensating plate (2) and the edge part of the upper main surface thereof restricts movement of the thermal compensating plate (2) in the radial direction. Further, a spring (31) interposed between a flange portion (4c) of the main electrode (4) and the fixing ring (30) presses and energizes the thermal compensating plates (2, 3) and the semiconductor substrate (1) against the main electrode (5). Since the free movements of the semiconductor substrate and the thermal compensating plates is restricted, the semiconductor substrate can be prevented from damage.

Semiconductor device

A compression bonded type semiconductor element having a ring-shaped gate terminal in the form of an annular metal disk projecting through the side of an insulating cylinder. The ring-shaped gate terminal includes an inner circumferential planar portion which is disposed so as to be slidable on an annular ring gate electrode. The annular ring gate electrode is in contact with a gate electrode formed on a semiconductor substrate, and the ring gate electrode is pressed against the gate electrode via the ring-shaped gate terminal by an elastic body.

Compression bonded type semiconductor element and semiconductor device

An alloy-free pressure contact type semiconductor device maintains a high reliability during transportation even without a pressure contact tool such as a simplified stack and therefore does not require a high transportation cost. Through holes (H1) and (H2) each having a circular cross section are formed in distortion buffer plates (21A) and (21K) at the center. A first and a second bottomed holes (i.e., recesses) (N1) and (N2) are formed in an anode electrode plate (41A) and a cathode electrode plate (41K). From the through hole (H1) up to the first bottomed hole (N1), a pressure contact pin (9) biased by a coil spring (8) is disposed. From the through hole (H2) down to the second bottomed hole (N2), a fixing pin (90) is disposed. Without applying external pressure upon the device, it is possible to prevent displacement of the first and the second distortion buffer plates due to vibration or impact during transportation and damage to a semiconductor body. Therefore, a transportation cost is low and the reliability of the device is high.

Pressure contact type semiconductor device with axial bias and radial

Provided is a press contact type semiconductor device which improves the shape of an insulator formed along an outer peripheral edge and a major surface of a semiconductor substrate, simplifies alignment of an anode heat compensator and a cathode heat compensator, causes no biting, causes no separation in molding, and has excellent heat dissipation. In the press contact type semiconductor device, the inner periphery of a ring-shaped insulator (22) which is formed along an edge of the overall periphery and a major surface of a semiconductor substrate (6) provided with a P-N junction in its interior comprises a tapered portion (22a) along the inner peripheral direction and a vertical portion (22b) forming a perpendicular inner peripheral diameter which is continuous to this tapered portion (22a).

Press contact type semiconductor device

An object of the present invention is to enhance the transmission efficiency of light signals. An output end of a light guide is coupled to a light receiving portion of a semiconductor substrate with an optical coupling agent. Reflection preventing films of silicon dioxide are formed on both the output end and the input end of the light guide. Similar reflection preventing films are formed on both surfaces of a light introducing window provided at the input end of the light guide, too. The light introducing window is provided to maintain the inside of the device airtight while enabling passage of light signals. Since the reflection preventing films are formed, the transmission efficiency of light signals is high, so that the sensitivity of the device increases.

Light trigger type semiconductor device with reflection prevention film

In order to obtain a pressure-connection type semiconductor device while preventing misregistration of a semiconductor base substrate and a thermal compensator with no penetration of an insulating/holding material and a method suitable for fabricating this device, concentric first and second steps (31c, 31a) are provided on an upper major surface of a first thermal compensator (31) from its outer periphery toward the center. A corner groove (3b) is provided along the overall periphery of an inner comer of the first step (31c), in the form of a ring. Since no insulating/holding material is provided in a contact surface between the semiconductor the substrate and the thermal compensator, the semiconductor base substrate and the thermal compensator are maintained in excellent electrical contact while no local stress is applied to the semiconductor substrate when the same is brought into pressure contact with the thermal compensator.

Pressure-connection type semiconductor device having a thermal

A semiconductor substrate (2) is pressed against heat compensators (6, 31) for electrical contact therewith without brazing. Silicone rubber (32) fixes the outer peripheral edge of the semiconductor substrate (2) and its adjacent portion on the heat compensator (31), preventing position shifts of the semiconductor substrate (2) without thermal distortion and, accordingly, preventing damages to the semiconductor substrate (2). The absence of thermal distortion, spikes, voids due to brazing permits the prevention of electrical characteristic deterioration.

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Fukuoka, Japan

Yuzuru Konishi