Canon Kabushiki Kaisha

Yuzou Kouda

Masafumi Sano

Keishi Saitoh

Tatsuyuki Aoike

Toshimitsu Kariya

Jinsho Matsuyama

Mitsuyuki Niwa

Masahiko Tonogaki

Ryou Hayashi

A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

Deposited film forming apparatus

Photovoltaic device and a forming method thereof

Growing community of inventors

Nagahama, Japan

Yuzou Kouda