Seiko Epson Corporation

Dowa Mining Co., Ltd.

Pioneer Electronic Corporation

Pioneer Electric Corporation

Yuzo Tasaki

Eiji Natori

Koichi Furuyama

Takeshi Kijima

Mamoru Sato

Shuji Yoshizawa

Kiyofumi Chikuma

Atsushi Onoe

Ayako Yoshida

Mamoru Satoh

A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Piezoelectric device having a ferroelectric film including a ferroelectric material

Piezoelectric device having a ferroelectric film including a solid solution

Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element

A method of manufacturing a ceramic film includes forming the ceramic film by crystallizing a ceramic raw material liquid which includes a first raw material liquid and a second raw material liquid. The first raw material liquid and the second raw material liquid are different types of liquids, the first raw material liquid is a raw material liquid for producing a ferroelectric, the second raw material liquid is a raw material liquid for producing an oxide such as an ABO-type oxide, a solvent included in the first raw material liquid and a solvent included in the second raw material liquid have different polarities, and the ceramic film is formed in a state in which the first raw material liquid and the second raw material liquid are phase separated so that first crystals formed of the first raw material liquid are intermittently formed in a surface direction of the ceramic film and second crystals formed of the second raw material liquid are formed so as to interpose between the first crystals.

Ceramic film and method of manufacturing the same, ferroelectric capacitor, semiconductor device, and other element

A method of manufacturing a ceramic film includes a step of forming a ceramic filmby crystallizing a raw material body. The raw material bodycontains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.

Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device

A method of manufacturing a ceramic film includes a step of forming a ceramic film by crystallizing a raw material body The raw material body contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.

When a potassium-containing substance is formed in to a film using an organic potassium complex as a potassium source by the CVD method, it is prevented that the film formation rate is changed with the lapse of time, and the potassium content in the film thus formed is changed. As a potassium source for vaporization used for depositing the potassium-containing substance on a substrate by the CVD method, a .beta.-diketone complex of potassium that has been melted by heating to a temperature higher than its melting point and then cooled to be solidified is used.

Potassium-containing thin film and process for producing the same

A CVD precursor that is a precursor in film preparation by the CVD method, comprising a metalorganic compound containing a metal element constituting the film (called 'main compound') having blended therewith another organic compound, the other organic compound having a lower vapor pressure than the main compound at a precursor vaporization temperature and when blended with the main compound forming a fusible blend having a lower melting point than the melting point of the main compound. In particular, when the main compound has the structural formula Ma(DPM).sub.2 (Ma being representing an alkaline earth metal), Ma(TMOD).sub.2 or Ma(TMND).sub.2 is blended therewith.

CVD precursors and film preparation method using the same

A method of subliming material is provided for use in a CVD film preparation method wherein a CVD precursor is sublimed from its solid state by heating to a temperature not exceeding its melting point, thereby producing a vapor of the precursor, and the vapor of the precursor is transported to a reactor. The method of subliming material comprises the steps of forming the solid-state compound into a film, covering a back surface of the film with a non-reactive support and exposing a front surface of the film to an atmosphere as a sublimation surface. The method maintains the exposed surface area of the solid compound constant during processing.

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Hachioji, Japan

Yuzo Tasaki