Other

Ideal Star Inc.

Yuzo Mizobuchi

Yasuhiko Kasama

Kenji Omote

Kuniyoshi Yokoo

Hiroshi Okada

Mitsuo Saito

Morihiko Saida

Haruna Oizumi

Hiroyuki Sagami

Hiroshi Tamura

Kazuaki Mizokami

Takeo Furukawa

Yoshinori Sibata

Kazuhiro Kawajiri

Haruji Shinada

A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Gas sensor, gas measuring system using the gas sensor, and gas detection module for the gas sensor

In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.

Fullerene-based material and process for producing fullerene-based material

A solid-state photo sensor device includes a first electrode layer for allowing light to pass therethrough, a first amorphous silicon layer of one conductivity type formed below the first electrode layer, a second amorphous silicon layer of a conductivity type, other than the one conductivity type, disposed below the first amorphous silicon layer, and an output circuit for delivering in the form of an electric current photocarriers excited at least in the second amorphous silicon layer. The first and second amorphous silicon layers each contain inpurity elements whose concentration ranges from about 0 molPPM to 200 molPPM. The output circuit delivers as an electric current also photocarriers excited in the first amorphous silicon layer.

Solid-state photo sensor device

Growing community of inventors

Sendai, Japan

Yuzo Mizobuchi