Hitachi, Ltd.

Other

Yuzo Kozono

Matahiro Komuro

Masanobu Hanazono

Yuichi Satsu

Shinji Narishige

Kunihiro Maeda

Toshiyuki Ohno

Satoshi Kokura

Akira Onuma

Takashi Naito

Hiroki Yamamoto

Takashi Namekawa

Katsumi Ishikawa

Ryoichi Kajiwara

Takao Imagawa

Takeyuki Itabashi

Tsutomu Yatsuo

Tetsuo Nakazawa

Noboru Baba

Takaya Suzuki

Yasutaka Suzuki

Takeshi Yasuda

Eiji Ashida

Masahiro Kasai

Masayasu Nihei

Tatsumi Hirano

Daisuke Kawase

Masatoshi Seki

Yohsuke Inoue

Masao Shimizu

Tetsuro Kuroda

Motomichi Doi

Yoko Kanke

In a ferromagnetic material containing at least one kind of rare-earth element, a layer containing at least one kind of alkaline earth element or rare-earth element and fluorine is formed at the grain boundary or near the powder surface of the ferromagnetic material. A further layer containing at least one kind of rare-earth element, having a fluorine concentration lower than that of the layer described first and having a rare-earth element concentration higher than that of the host phase of the ferromagnetic material, or an oxide layer containing a rare-earth element is formed in adjacent with a portion of the layer described first.

Rare-earth magnet

A lamellar high resistance layer having resistivity ten times or higher than that of a mother phase containing iron or cobalt is formed and an oxygen content is controlled to 10 to 10000 ppm so that the reliability and residual magnetic flux density are increased.

Low loss magnet and magnetic circuit using the same

A magnetic recording medium comprising a substrate , an inorganic compound layer which works as a shielding layer, a magnetic layer and a protective layer which are laminated on said substrate; wherein said inorganic compound layer comprises column-like crystal particles and amorphous grain boundary phases isolating said particles , wherein said magnetic layer has magnetic particles arranged regularly and epitaxially grows on said inorganic compound layer , and wherein the grain sizes and the standard grain size deviation of magnetic particles of said magnetic layer reflect those of said inorganic compound layer

Magnetic recording medium, a manufacturing method thereof, and a magnetic recording unit using thereof

An X-ray tube which is high in brightness and high in resolution, and can withstand continuous long-time use, that is, it can withstand a high heat load. An X-ray target and an X-ray tube having the X-ray target include an X-ray generating metal layer having an average crystal grain diameter not larger than 30 &mgr;m on the surface of a base plate in the X-ray irradiated side. The X-ray tube has a small focus point and can withstand a high input load. A CT apparatus using the X-ray tube can provide a high resolution and a high definition image.

Anode target for X-ray tube and X-ray tube therewith

To provide a field-effect transistor having a large power conversion capacity and its fabrication method by decreasing the leakage current between the source and the drain of a semiconductor device made of hexagonal-system silicon carbide when the gate voltage of the semiconductor device is turned off and also decreasing the electrical resistance of the semiconductor device when the gate voltage of the semiconductor device is turned on. The main current path of the field-effect transistor is formed so that the current flowing between the source and the drain of, for example, a field-effect transistor flows in the direction parallel with the {0001} plane and a channel forming plane is parallel with the {1120} plane. �Selected Drawing!FIG. 1

Semiconductor device for improved power conversion having a

A magnetic detecting device is constructed of a substrate, a first magnetic layer formed on the substrate, a first magnetic layer formed on the substrate, an intermediate layer containing an atom indicative of weak spincoupling and formed on the first magnetic film, and a second magnetic layer formed on the intermediate layer. The magnetic detecting device further comprises a unit or supplying a current through the first and second magnetic layers, and a unit for detecting a voltage generated between the first magnetic layer and the second magnetic layer while the current is supplied thereto.

Spin interaction device

A magnetic semiconductor element formed by joining a magnetostrictive material and a semiconductive material with each other, in which the lattice constant of the semiconductive material is variable by magnetostriction at the interface therebetween; or in which an interface between the two materials is formed by epitaxial growth and the orientation of the magnetostriction is identical to the orientation in which the lattice constant of the semiconductive material varies. Next, a semiconductor laser is so constructed that the interface between the magnetostrictive material and the semiconductive material is disposed in the semiconductor laser and the wavelength and the output of the semiconductor laser are variable by magnetostriction. Further, a method of making a magnetic semiconductor element comprises a step of epitaxially growing the layer of the magnetostrictive material on the layer made of the semiconductive material. Furthermore, a magneto-optical read out head is so constructed that the interface formed by joining the magnetostrictive material and the semiconductive material with each other is disposed in the semiconductor laser constituting a head reading out information recorded in a magnetic recording medium.

Magnetic semiconductor element and a magneto-optical read out head

A superconducting thin film obtained by laminating a Cu-O atomic pair film and another oxide film while growing in one direction shows a higher superconducting critical temperature (Tc). By alternately laminating a thin film of A.sub.2 CuO.sub.4 and a thin film of L.sub.2 CuO.sub.4, wherein A and L are different rare earth elements, the Tc can be enhanced remarkably.

Superconducting thin films made of stacked composite oxide layers

The film is composed of an alternate lamination of unit iron layers and unit layers of ferromagnetic iron compound such as Fe.sub.3 Al, Fe.sub.3 Si, Fe.sub.3 Ge and Fe.sub.3 Ga. The thickness of the both unit layers is less than 70 .ANG.. The film has a high saturation magnetization more than 230 emu/g and a high thermal stability so that the film is particularly applicable to a magnetic head core.

Multi-layered ferromagnetic film and method of manufacturing the same

An electric power supply in pulse form is applied between a welding electrode and workpieces. The temperature of a molten pool is measured by a radiation-type thermometer when no power supply pulse is applied, and the welding condition is controlled in response to an output signal of the radiation-type thermometer.

Method for controlling arc welding and apparatus therefor

In a welding apparatus having a plurality of electrodes and adapted for carrying out welding operation on a workpiece by alternately supplying currents to the individual electrodes through switching elements, an apparatus and method of controlling the currents supplied to the electrodes, comprising selecting the values of the currents supplied to the individual electrodes depending on the material of the workpiece, and carrying out the welding operation on the workpiece by alternately supplying the currents of the selected values to the individual electrodes respectively through the switching elements. The method is featured by the fact that the ratio between the individual currents is selected under the condition that the sum of the values of all the currents is maintained at a predetermined value. It is also featured by the fact that, depending on the welding condition, the values of the individual currents can be freely selected without the limitation of maintaining the sum of all the currents at the predetermined value. Therefore, the apparatus and method are applicable to welding of a variety of materials by selecting the values of the individual currents depending on whether the workpiece has a high or low melting point and also whether the workpiece has a high or low heat conductivity.

Method of electrode current control in welding apparatus having a

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Hitachiota, Japan

Yuzo Kozono