Nichia Corporation

Yuya Yamakami

Daisuke Morita

Kentaro Watanabe

Giichi Marutsuki

Eiji Muramoto

Akinori Kishi

Takumi Otsuka

Haruhiko Nishikage

Mitsumasa Takeda

Shota Kammoto

A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.

Light emitting element

A light-emitting device includes a light-emitting element that includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer therebetween and is configured to emit first light from an upper surface of the first semiconductor layer; a protective film over the upper surface of the first semiconductor layer; a light-transmissive resin layer disposed in contact with the protective film; and a wavelength conversion layer facing the upper surface of the first semiconductor layer over the protective film and the light-transmissive resin layer, the upper surface of the first semiconductor layer having first projections and a flat portion, an upper surface of the protective film having second projections above the first projections. In a cross-sectional view a void is located above the flat portion and between the protective film and the light-transmissive resin layer.

Light-emitting device and method for manufacturing light-emitting device

A method for manufacturing a light-emitting element includes exposing a portion of an insulating layer from under a metal layer and a semiconductor layer by removing, through an opening of a resist layer, a portion of the metal layer and a portion of the semiconductor layer by wet etching using a first etchant, etching rates of the first etchant for the metal layer and the semiconductor layer each being higher than an etching rate of the first etchant for the insulating layer; removing the resist layer by wet etching after the removing of the metal layer portion and the semiconductor layer portion; and after the removing of the resist layer, removing a remaining portion of the metal layer while causing the insulating layer exposed from under the metal layer and the semiconductor layer to remain. The opening of the resist layer is positioned directly on the conductive layer.

Method for manufacturing light-emitting element

A light-emitting device includes a semiconductor layered structure; an upper electrode disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced from a region directly under the upper electrode, the lower electrode being reflective; and a protective film disposed continuously on a surface of the upper electrode and the upper surface of the semiconductor layered structure. A thickness of a first portion of the protective film, which is disposed at least in a region directly above the lower electrode, is smaller than a thickness of a second portion of the protective film, which is disposed continuously on the surface of the upper electrode and the upper surface of the semiconductor layered structure adjacent to the portion on which the upper electrode is disposed.

Light-emitting device

A light-emitting device includes: a semiconductor layered structure; a conductive substrate disposed under the semiconductor layered structure; one or more upper electrodes each disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure; one or more metal members each having light reflectivity and disposed on the lower surface of the semiconductor layered structure in a region between (i) a region directly under a respective one of the one or more the upper electrodes and (ii) the region on which the lower electrode is disposed; one or more first insulating members each disposed on the lower surface of the semiconductor layered structure in the region directly under the respective one of the one or more the upper electrodes; and one or more second insulating members on a lower surface of the metal member.

A light-emitting device includes a semiconductor layered structure; a conductive substrate disposed below the semiconductor layered structure; one or more upper electrodes, each disposed on a portion of an upper surface of the semiconductor layered structure; a lower electrode disposed on a lower surface of the semiconductor layered structure in a region spaced apart from regions of the lower surface of the semiconductor layered structure directly under the upper electrodes, the lower electrode being electrically connected between the semiconductor layered structure and the substrate; and one or more conduction prevention portions, each disposed on the lower surface of the semiconductor layered structure in at least a region located between (i) a region directly under a respective one of the one or more upper electrodes and (ii) the region on which the lower electrode is disposed.

A method of fabricating a plurality of light emitting elements includes forming a nitride semiconductor layer on a growth substrate, the nitride semiconductor layer including at least an n-type nitride semiconductor layer, an active layer made of a nitride semiconductor, and a p-type nitride semiconductor layer stacked in this order; forming a p-electrode layer, the p-electrode layer including portions that correspond to the light emitting elements; forming a p-passivation layer that includes portions between the portions of the p-electrode layer formed on the upper surface of the nitride semiconductor layer; forming a seed layer on the p-electrode layer and the p-passivation layer; forming an insulating layer having portions formed on an upper surface of the seed layer; forming a plating layer on the seed layer; and forming a plating substrate by removing the insulating layer to form spaces between portions of the plating layer.

Semiconductor light emitting element fabrication method

A method of forming a semiconductor light emitting element. The method can include forming a seed layer on a semiconductor layer assembly including at least one nitride semiconductor layer. An insulating mask can be formed on the seed layer. The insulating mask can include a plurality of element areas separated by cross spaces. Each element area of the plurality of element areas can be connected to at least one of the other element areas of the plurality of element areas. The seed layer can be plated such that a plating substrate is formed in each of the plurality of element areas.

Growing community of inventors

Komatsushima, Japan

Yuya Yamakami