Tosoh Corporation

National Institute for Materials Science

Yuya Tsuchida

Hideto Kuramochi

Masami Mesuda

Ryo Akiike

Osamu Matsunaga

Hiroyuki Hara

Takahiro Nagata

Toyohiro Chikyow

Yoshihiro Ueoka

Yuya Suemoto

Liwen Sang

The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them. A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

Gallium nitride-based sintered body and method for manufacturing same

The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.

Multilayer film structure and method for producing same

Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained. An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 μm or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 μm is fewer than or equal to 0.1/cm; and the yttrium ingot has a relative density of greater than or equal to 96%.

Yttrium ingot and sputtering target in which the yttrium ingot is used

An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.

Oxide sintered body and transparent conductive oxide film

Growing community of inventors

Ayase, Japan

Yuya Tsuchida