Mitsubishi Chemical Corporation

Yuya Saito

Naoyuki Uchida

Kazuma Inoue

Shogo Koga

Yuuki Enatsu

Kenji Iso

Haruki Koshitouge

Hiromitsu Kimura

Masanari Nakayama

Shigeru Terada

Sumitaka Itoh

To provide a sound insulation sheet member which is excellent in sound insulation performance in a low frequency band and which has a compact configuration. A sound insulation sheet memberincluding a substrateand a concavo-convex structureplaced on at least one surface of the substrate, in which the concavo-convex structureis provided by repeatedly arranging a plurality of units each defined as a concavo-convex unit shapeincluding a linear convex portion, in one direction at substantially constant intervals on the surface of the substrate

Sound insulation sheet, manufacturing method thereof, and sound insulation structure

A C-plane GaN substrate only mildly restricts the shape and dimension of a nitride semiconductor device formed on the substrate. The variation of an off-angle on the main surface of the substrate is suppressed. In the C-plane GaN substrate: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on the main surface; the number density of the facet growth area accompanied by a core among the plurality of facet growth areas is less than 5 cmon the main surface; and, when any circular area of 4 cm diameter is selected from an area which is on the main surface and is distant by 5 mm or more from the outer peripheral edge of the substrate, the variation widths of an a-axis direction component and an m-axis direction component of an off-angle within the circular area is each 0.25 degrees or less.

C-plane GaN substrate

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Tokyo, Japan

Yuya Saito