Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Yuya Matsuda

Ryo Suemitsu

According to one embodiment, a method for manufacturing a semiconductor device includes forming a first metal material inside the first holes; forming a plurality of metal layers on the first region, the metal layers being stacked with an insulator interposed, the metal layers including a plurality of terrace portions arranged in a staircase configuration with a level difference; forming a second insulating layer on the first insulating layer and on the terrace portions; simultaneously forming a second hole and a plurality of third holes piercing the second insulating layer, the second hole reaching the first metal material, the third holes reaching the terrace portions; and forming a second metal material inside the second hole and inside the third holes.

Method for manufacturing semiconductor device and semiconductor device

In one embodiment, a semiconductor manufacturing apparatus includes an electrostatic chuck that includes a base and a first electrode provided on the base and is configured to electrostatically adsorb a wafer on the first electrode. The apparatus further includes a measurement module configured to measure potential of the wafer. The apparatus further includes a controller configured to adjust potential of the base based on the potential of the wafer and to adjust potential of the first electrode based on the potential of the wafer or the base, when the potential of the wafer measured by the measurement module changes.

Semiconductor manufacturing apparatus and method of operating the same

According to one embodiment, a semiconductor manufacturing apparatus includes a manufacturing processor, a signal acquisition unit, a frequency characteristic acquisition unit, and an end-point acquisition unit. The signal acquisition unit acquires a first processing signal which shows a different behavior during processing of a stacked body and after the processing of the stacked body. The frequency characteristic acquisition unit acquires a frequency characteristic of a noise caused by a periodic structure of the stacked body from the first processing signal during the processing of the stacked body. The end-point acquisition unit detects an end point of the processing using the acquired frequency characteristic. The manufacturing processor ends the processing when the end point is detected.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

A semiconductor device includes a substrate; a stack structure including a plurality of insulating films and a plurality of metal films disposed alternately one above another. The stack structure is provided above the substrate and has a stairway portion including a plurality of terraces located at least at one end portion thereof. A liner film and a stopper film are disposed so as to cover an upper portion the stack structure in the stairway portion formed of the terraces. A plurality of holes are connected to each of the terraces. Each of the terraces is formed of a stack of the insulating films and the metal films. Each of the holes extends through the stopper film and the liner film and connect to the metal films of the terraces.

Semiconductor device and method of manufacturing the same

According to one embodiment, a first core pattern is formed in a wiring portion on a process target film and a second core pattern, which is led out from the first core pattern and includes an opening, is formed in a leading portion on the process target film, a sidewall pattern is formed along an outer periphery of the first core pattern and the second core pattern and a sidewall dummy pattern is formed along an inner periphery of the opening of the second core pattern, the first core pattern and the second core pattern are removed, and the process target film is processed to transfer the sidewall pattern and the sidewall dummy pattern.

Growing community of inventors

Mie, Japan

Yuya Matsuda