Nissin Ion Equipment Co., Ltd.

Yuya Hirai

Weijiang Zhao

Masakazu Adachi

Tomoya Taniguchi

Takayuki Murayama

Shigeki Sakai

Suguru Itoi

Yuta Iwanami

A hydrogen supply device disposed in a high-potential section includes a bottle internally provided with a hydrogen absorbing alloy.

Hydrogen supply device, and ion beam irradiation apparatus equipped therewith

A semiconductor manufacturing apparatus includes a wafer clamp including a mechanical clamp and an electrostatic chuck, and a controller that controls the wafer clamp to selective clamp a wafer using only the mechanical clamp based on a processing temperature of a wafer.

Wafer clamping method and semiconductor manufacturing apparatus

An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode.

Ion source and cleaning method thereof

An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.

Growing community of inventors

Shiga, Japan

Yuya Hirai