Toshiba Memory Corporation

Kioxia Corporation

Kabushiki Kaisha Toshiba

Yuya Akeboshi

Yasuhito Yoshimizu

Hiroaki Yamada

Hisashi Okuchi

Fuyuma Ito

Hiroshi Tomita

Katsuhiro Sato

Hakuba Kitagawa

Shinsuke Muraki

Masayuki Kitamura

Akifumi Gawase

Tatsufumi Hamada

Shinichi Sotome

Tomohiro Kuki

Yosuke Mitsuno

According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.

Substrate treatment apparatus and manufacturing method of semiconductor device

According to one embodiment, a semiconductor memory device includes a stacked body of first conductor layers and second conductor layers. A pillar including a semiconductor layer extends along through the stacked body in a first direction. A charge storage layer is between the conductor layers and the semiconductor layer. The semiconductor layer includes a first portion extending along the first direction from an uppermost first conductor layer to a lowermost second conductor layer and a second portion above the first portion in the first direction. The second portion has a diameter that decreases with increasing distance along the first direction from the first portion.

Semiconductor memory device and manufacturing method of semiconductor memory device

In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (HO) of a first content rate to etch the first metallic film. The second liquid includes water (HO) at a second content rate higher than the first content rate after the etching has started.

Substrate treatment method and substrate treatment apparatus

A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

Substrate processing device and method of manufacturing semiconductor device

According to some embodiments, a semiconductor device manufacturing method includes forming a sacrificial film on a material film. The method includes processing the sacrificial film, and forming a first groove in the sacrificial film having a first width and a second groove in the sacrificial film having a second width larger than the first width, the material film defining a base of the first groove and a base of the second groove. The method includes forming a catalyst layer on the sacrificial film, and on the base of the first groove and the base of the second groove. The method includes forming a first metal film having a thickness equal to or larger than half the first width and smaller than half the second width on the catalyst layer by plating. The method includes removing at least a portion of the first metal film in the second groove while leaving a portion of the first metal film in the first groove unremoved. The method includes removing the catalyst layer on the sacrificial film while leaving the catalyst layer on the base of the second groove unremoved. The method includes forming a second metal film in the second groove by the plating.

Semiconductor device manufacture method

According to one embodiment, the plurality of contact vias extend in the stacking direction in the insulating layer, and are in contact with the end parts of the electrode layers. The plurality of second columnar parts extend in the stacking direction in the second stacked part, and include a plurality of second semiconductor bodies being different in length in the stacking direction.

Three-dimensional memory device

Growing community of inventors

Mie, Japan

Yuya Akeboshi