Sandisk Technologies Inc.

Omnivision Technologies, Inc.

Sandisk Corporation

Yuxin Wang

Feng Q Pan

Khin Htoo

Jonathan Huynh

Liang Zuo

Qui V Nguyen

Liping Deng

Trung Pham

Bi Yuan

Albert Chang

Byungki Woo

Yingkan Lin

Zhihao Xu

An image sensor pixel noise measurement circuit includes a pixel array on an integrated circuit chip. The pixel array includes a plurality of pixels including a first pixel to output a first image data signal, and a second pixel to output a second image data signal. A noise amplification circuit on the integrated circuit chip is coupled to receive the first and second image data signals from the pixel array. The noise amplification circuit is coupled to output an amplified differential noise signal in response to the first and second image data signals received from the pixel array. A fast Fourier transform (FFT) analysis circuit on the integrated circuit chip is coupled to transform the amplified differential noise signal output by the noise amplification circuit from a time domain to a frequency domain to analyze a pixel noise characteristic of the pixel array.

Image sensor pixel noise measurement

A ramp generator for use in readout circuitry includes an integrator coupled to receive a ramp generator input reference signal to generate a reference ramp signal coupled to be received by an analog to digital converter. A power supply compensation circuit that is coupled to generate the ramp generator input reference signal includes a delay circuit including a variable resistor and a filter capacitor coupled to receive a power supply signal. The variable resistor is tuned to match a delay ripple from the power supply to a bitline output. A capacitive voltage divider is coupled to the delay circuit to generate the ramp generator input reference signal. The capacitive voltage divider includes a first variable capacitor coupled to a second variable capacitor that are tuned to provide a capacitance ratio that matches a coupling ratio from the power supply to the bitline output.

Image sensor power supply rejection ratio improvement through ramp generator in continuous time readout circuitry

A charge pump circuit for generating an output voltage is described. Charge pump circuits typically have two branches. As the clocks supplying the branches of a charge pump circuit alternate, the output of each branch will alternately provide an output voltage, which are then combined to form the pump output. The techniques described here allow charge to be transferred between the two branches, so that as the capacitor of one branch discharges, it is used to charge up the capacitor in the other branch. An exemplary embodiment using a voltage doubler-type of circuit, with the charge transfer between the branches accomplished using a switch controller by a boosted version of the clock signal, which is provided by a one-sided voltage doubler.

Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories

A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where the reference voltage is provided from the node. The circuit also includes a variable resistance connected to receive an input indicative of the circuit temperature and through which the diode element is connected to the node. The value of the variable resistance is adjusted based upon the circuit temperature input. The circuit is useful for application as a peripheral circuitry, such as on a flash or other non-volatile memory and other circuits requiring an on-chip reference voltage source.

Bandgap voltage and temperature coefficient trimming algorithm

A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where the node supplies the reference voltage. The circuit also includes a variable resistance connected to receive an input indicative of the circuit temperature and through which the diode element is connected to the node. The value of the variable resistance is adjusted based upon the circuit temperature input. The circuit is useful for application as a peripheral circuitry, such as on a flash or other non-volatile memory and other circuits requiring an on-chip reference voltage source.

Techniques and corresponding circuitry for deriving a supply a bias voltage for a memory cell array from a received reference voltage is presented. The circuit includes a voltage determination circuit, which is connected to receive the reference voltage and generate from it the bias voltage, a temperature sensing circuit, and a calibration circuit. The calibration circuit is connected to receive the bias voltage and to receive a temperature indication from the temperature sensing circuit and determine from the bias voltage and temperature indication a compensation factor that is supplied to the voltage determination circuit, which adjusts the bias voltage based upon the compensation factor.

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Sunnyvale, CA, United States of America

Yuxin Wang