Shanghai Huali Microelectronics Corporation

Yuwen Chen

Cheng Li

Lei Li

Qiang Xu

Feng Ji

Youcun Hu

Chunsheng Zheng

Yushu Yang

Chaos Zhang

Wenguang Zhang

The present invention provides a method of forming connection holes. The method utilizes two different gases to perform two etching processes for the interlayer dielectric layer so as to form connection holes. The etching rate of the interlayer dielectric layer in the first etching process using the first etching gas is proportional to the size of the openings which defines the connection hole while the etching rate of the interlayer dielectric layer in the second etching process using the second etching gas is inversely related with size of the openings. According to the present invention, the first etching gas and the second etching gas compensate for each other to eliminate the loading effect, thus the connection holes are formed with almost the same depth. Therefore the damage of the etching stopper layer due to the high etching rate in the larger connection holes can be avoided, which prevents the excessive variation of the connecting resistance and expands the process window.

Method of forming connection holes

A method of manufacturing high performance metal-oxide-metal capacitor device that resolves problems with implementing high capacitance in the metal-oxide-metal region by filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and filling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor.

Manufacturing method of a high performance metal-oxide-metal

A method for improving capacitance uniformity in a MIM device, mainly for the purpose of improving uniformity of a thin film within the MIM device, includes eight steps in order and step S-step Smay be repeated for several times as needed. According to the method for improving capacitance uniformity in a MIM device of the present invention, a certain quantity of defects in the thin film are removed by means of several times of deposition/plasma processes based on the current PECVD, and uniformity of the deposited thin film is increased, thereby improving uniformity in wet etching rate of the thin film and further improving capacitance uniformity in the MIM device.

Method for improving capacitance uniformity in a MIM device

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Shanghai, China

Yuwen Chen