Sandisk Technologies Inc.

Yuvaraj Krishnamoorthy

Ashish Ghai

Srikar Peesari

Daniel Joseph Linnen

Mark Shlick

Dongxiang Liao

Avinash Rajagiri

Ekamdeep Singh

Kalpana Vakati

Maythin Uthayopas

A method for detecting defects in a memory system includes receiving a command to perform a standard erase operation on at least one memory cell of the memory system. The method also includes performing a first defect detection operation on the at least one memory cell. The method also includes setting, in response to the first defect detection operation detecting a defect, a defect status indicator. The method also includes performing the standard erase operation on the at least one memory cell. The method also includes performing a second defect detection operation on the at least one memory cell. The method also includes setting, in response to the second defect detection operation detecting a defect, the defect status indicator.

NAND field use erase plus defect detections

To prevent data loss due to latent defects, a non-volatile memory system will use a leakage detection circuit to test for small amounts of leakage that indicate that the memory is susceptible to failure.

Non-volatile memory with in field failure prediction using leakage detection

Growing community of inventors

San Jose, CA, United States of America

Yuvaraj Krishnamoorthy